TY - JOUR
T1 - Structural and optical properties of GaN thin films grown on Si (111) by pulsed laser deposition
AU - Martínez-Ara, Luis Arturo
AU - Aguilar-Hernández, Jorge Ricardo
AU - Contreras-Puente, Gerardo
AU - Sastré-Hernández, Jorge
AU - Hernández-Hernández, Luis Alberto
AU - De Los ángeles Hernández-Pérez, María
AU - Maldonado-Altamirano, Patricia
AU - Mendoza-Pérez, Rogelio
N1 - Publisher Copyright:
© 2019 Universidade Federal de Sao Carlos. All Rights Reserved.
PY - 2019
Y1 - 2019
N2 - In this work we present results and analysis concerning the processing and characterization of Gallium Nitride (GaN) thin films (TF) grown on Si (111) substrates by pulsed laser deposition technique (PLD), which were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) and Raman spectroscopy (RS). The GaN films showed the hexagonal phase with a preferential orientation in the (100) direction, SEM pictures showed a cauliflower-like morphology. Room temperature PL studies showed the so called GaN-yellow band, at 2.29 eV, as well as the donor-acceptor (DA) pair luminescent transition around 3.0 eV. At 10 K, phonon replicas, separated by 69 meV, were observed. By RS, the optical mode on 710 cm-1 was observed, corresponding to the longitudinal optical phonon, A1(LO), as reported for this material.
AB - In this work we present results and analysis concerning the processing and characterization of Gallium Nitride (GaN) thin films (TF) grown on Si (111) substrates by pulsed laser deposition technique (PLD), which were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) and Raman spectroscopy (RS). The GaN films showed the hexagonal phase with a preferential orientation in the (100) direction, SEM pictures showed a cauliflower-like morphology. Room temperature PL studies showed the so called GaN-yellow band, at 2.29 eV, as well as the donor-acceptor (DA) pair luminescent transition around 3.0 eV. At 10 K, phonon replicas, separated by 69 meV, were observed. By RS, the optical mode on 710 cm-1 was observed, corresponding to the longitudinal optical phonon, A1(LO), as reported for this material.
KW - Gallium nitride
KW - Photoluminescence
KW - Pulsed laser deposition
UR - http://www.scopus.com/inward/record.url?scp=85061378195&partnerID=8YFLogxK
U2 - 10.1590/1980-5373-MR-2018-0263
DO - 10.1590/1980-5373-MR-2018-0263
M3 - Artículo
AN - SCOPUS:85061378195
SN - 1516-1439
VL - 22
JO - Materials Research
JF - Materials Research
IS - 2
M1 - e20180263
ER -