Structural and optical properties of GaN thin films grown on Si (111) by pulsed laser deposition

Ingeniería y ciencia de los materiales

• Pulsed laser deposition 100%
• Gallium nitride 89%
• Optical properties 80%
• Structural properties 70%
• Phonons 67%
• Thin films 61%
• Raman spectroscopy 57%
• Photoluminescence spectroscopy 45%
• Photoluminescence 34%
• Scanning electron microscopy 34%
• X ray diffraction 21%
• Substrates 15%
• Temperature 8%

Química

• Pulsed Laser Deposition 85%
• Nitride 62%
• Optical Property 47%
• LO Phonon 37%
• Raman Spectroscopy 32%
• Scanning Electron Microscopy 25%
• Phonon 24%
• Deposition Technique 23%
• Photoluminescence Spectroscopy 23%
• Hexagonal Space Group 16%
• Photoluminescence 16%
• Luminiscence Type 15%
• Ambient Reaction Temperature 12%
• X-Ray Diffraction 10%
• Liquid Film 10%

Física y astronomía

• gallium nitrides 75%
• pulsed laser deposition 61%
• optical properties 42%
• Raman spectroscopy 36%
• thin films 33%
• photoluminescence 30%
• phonons 29%
• scanning electron microscopy 28%
• replicas 22%
• room temperature 11%
• characterization 11%
• diffraction 11%
• x rays 9%