Structural and optical properties of GaN thin films grown on Si (111) by pulsed laser deposition

Luis Arturo Martínez-Ara; Jorge Ricardo Aguilar-Hernández; Gerardo Contreras-Puente; Jorge Sastré-Hernández; Luis Alberto Hernández-Hernández; María De Los ángeles Hernández-Pérez; Patricia Maldonado-Altamirano; Rogelio Mendoza-Pérez

doi:10.1590/1980-5373-MR-2018-0263

Structural and optical properties of GaN thin films grown on Si (111) by pulsed laser deposition

Luis Arturo Martínez-Ara, Jorge Ricardo Aguilar-Hernández, Gerardo Contreras-Puente, Jorge Sastré-Hernández, Luis Alberto Hernández-Hernández, María De Los ángeles Hernández-Pérez, Patricia Maldonado-Altamirano, Rogelio Mendoza-Pérez

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this work we present results and analysis concerning the processing and characterization of Gallium Nitride (GaN) thin films (TF) grown on Si (111) substrates by pulsed laser deposition technique (PLD), which were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) and Raman spectroscopy (RS). The GaN films showed the hexagonal phase with a preferential orientation in the (100) direction, SEM pictures showed a cauliflower-like morphology. Room temperature PL studies showed the so called GaN-yellow band, at 2.29 eV, as well as the donor-acceptor (DA) pair luminescent transition around 3.0 eV. At 10 K, phonon replicas, separated by 69 meV, were observed. By RS, the optical mode on 710 cm-1 was observed, corresponding to the longitudinal optical phonon, A1(LO), as reported for this material.

Translated title of the contribution	Propiedades estructurales y ópticas de películas delgadas de GaN cultivadas en Si (111) mediante deposición láser pulsada
Original language	English
Article number	e20180263
Journal	Materials Research
Volume	22
Issue number	2
DOIs	https://doi.org/10.1590/1980-5373-MR-2018-0263
State	Published - 2019

Keywords

Gallium nitride
Photoluminescence
Pulsed laser deposition

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10.1590/1980-5373-MR-2018-0263

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Martínez-Ara, L. A., Aguilar-Hernández, J. R., Contreras-Puente, G., Sastré-Hernández, J., Hernández-Hernández, L. A., De Los ángeles Hernández-Pérez, M., Maldonado-Altamirano, P., & Mendoza-Pérez, R. (2019). Structural and optical properties of GaN thin films grown on Si (111) by pulsed laser deposition. Materials Research, 22(2), Article e20180263. https://doi.org/10.1590/1980-5373-MR-2018-0263

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title = "Structural and optical properties of GaN thin films grown on Si (111) by pulsed laser deposition",

abstract = "In this work we present results and analysis concerning the processing and characterization of Gallium Nitride (GaN) thin films (TF) grown on Si (111) substrates by pulsed laser deposition technique (PLD), which were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) and Raman spectroscopy (RS). The GaN films showed the hexagonal phase with a preferential orientation in the (100) direction, SEM pictures showed a cauliflower-like morphology. Room temperature PL studies showed the so called GaN-yellow band, at 2.29 eV, as well as the donor-acceptor (DA) pair luminescent transition around 3.0 eV. At 10 K, phonon replicas, separated by 69 meV, were observed. By RS, the optical mode on 710 cm-1 was observed, corresponding to the longitudinal optical phonon, A1(LO), as reported for this material.",

keywords = "Gallium nitride, Photoluminescence, Pulsed laser deposition",

author = "Mart{\'i}nez-Ara, {Luis Arturo} and Aguilar-Hern{\'a}ndez, {Jorge Ricardo} and Gerardo Contreras-Puente and Jorge Sastr{\'e}-Hern{\'a}ndez and Hern{\'a}ndez-Hern{\'a}ndez, {Luis Alberto} and {De Los {\'a}ngeles Hern{\'a}ndez-P{\'e}rez}, Mar{\'i}a and Patricia Maldonado-Altamirano and Rogelio Mendoza-P{\'e}rez",

year = "2019",

doi = "10.1590/1980-5373-MR-2018-0263",

language = "Ingl{\'e}s",

volume = "22",

journal = "Materials Research",

issn = "1516-1439",

number = "2",

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Martínez-Ara, LA, Aguilar-Hernández, JR , Contreras-Puente, G , Sastré-Hernández, J, Hernández-Hernández, LA, De Los ángeles Hernández-Pérez, M, Maldonado-Altamirano, P & Mendoza-Pérez, R 2019, 'Structural and optical properties of GaN thin films grown on Si (111) by pulsed laser deposition', Materials Research, vol. 22, no. 2, e20180263. https://doi.org/10.1590/1980-5373-MR-2018-0263

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T1 - Structural and optical properties of GaN thin films grown on Si (111) by pulsed laser deposition

AU - Martínez-Ara, Luis Arturo

AU - Aguilar-Hernández, Jorge Ricardo

AU - Contreras-Puente, Gerardo

AU - Sastré-Hernández, Jorge

AU - Hernández-Hernández, Luis Alberto

AU - De Los ángeles Hernández-Pérez, María

AU - Maldonado-Altamirano, Patricia

AU - Mendoza-Pérez, Rogelio

PY - 2019

Y1 - 2019

N2 - In this work we present results and analysis concerning the processing and characterization of Gallium Nitride (GaN) thin films (TF) grown on Si (111) substrates by pulsed laser deposition technique (PLD), which were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) and Raman spectroscopy (RS). The GaN films showed the hexagonal phase with a preferential orientation in the (100) direction, SEM pictures showed a cauliflower-like morphology. Room temperature PL studies showed the so called GaN-yellow band, at 2.29 eV, as well as the donor-acceptor (DA) pair luminescent transition around 3.0 eV. At 10 K, phonon replicas, separated by 69 meV, were observed. By RS, the optical mode on 710 cm-1 was observed, corresponding to the longitudinal optical phonon, A1(LO), as reported for this material.

AB - In this work we present results and analysis concerning the processing and characterization of Gallium Nitride (GaN) thin films (TF) grown on Si (111) substrates by pulsed laser deposition technique (PLD), which were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) and Raman spectroscopy (RS). The GaN films showed the hexagonal phase with a preferential orientation in the (100) direction, SEM pictures showed a cauliflower-like morphology. Room temperature PL studies showed the so called GaN-yellow band, at 2.29 eV, as well as the donor-acceptor (DA) pair luminescent transition around 3.0 eV. At 10 K, phonon replicas, separated by 69 meV, were observed. By RS, the optical mode on 710 cm-1 was observed, corresponding to the longitudinal optical phonon, A1(LO), as reported for this material.

KW - Gallium nitride

KW - Photoluminescence

KW - Pulsed laser deposition

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DO - 10.1590/1980-5373-MR-2018-0263

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AN - SCOPUS:85061378195

SN - 1516-1439

VL - 22

JO - Materials Research

JF - Materials Research

IS - 2

M1 - e20180263

ER -

Structural and optical properties of GaN thin films grown on Si (111) by pulsed laser deposition

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