Passivation properties of nitric/phosphoric etching on CdTe films: Influence of the etching time and nitric acid concentration

O. Vigil-Galán; A. Cruz-Orea; C. Mejía-García; J. Fandiño; M. F. García-Sánchez

doi:10.1016/j.tsf.2010.12.124

Passivation properties of nitric/phosphoric etching on CdTe films: Influence of the etching time and nitric acid concentration

Título traducido de la contribución: Propiedades de pasivación del grabado nítrico/fosfórico en películas de CdTe: influencia del tiempo de grabado y la concentración de ácido nítrico

O. Vigil-Galán, A. Cruz-Orea, C. Mejía-García, J. Fandiño, M. F. García-Sánchez

Escuela Superior de Física y Matemáticas (ESFM)

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

7 Citas (Scopus)

Resumen

The chemical etch of CdTe surfaces with a mixture of phosphoric and nitric acids is used in research labs in order to enhance the back-contact formation in CdS/CdTe solar cells. However, the possible passivation effect of this approach has not been studied. In this work we report an investigation about the etching effect of nitric/phosphoric acid mixtures with different etching times (0, 30, 40 and 50 s) and variable concentrations of the nitric acid upon the surface recombination velocity of CdTe films deposited by close space vapor transport. Surface recombination velocities with values as low as 93 cm/s were achieved.

Título traducido de la contribución	Propiedades de pasivación del grabado nítrico/fosfórico en películas de CdTe: influencia del tiempo de grabado y la concentración de ácido nítrico
Idioma original	Inglés
Páginas (desde-hasta)	7164-7167
Número de páginas	4
Publicación	Thin Solid Films
Volumen	519
N.º	21
DOI	https://doi.org/10.1016/j.tsf.2010.12.124
Estado	Publicada - 31 ago. 2011

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@article{70d6993c0d604e21bba2f1a8a07b906e,

title = "Passivation properties of nitric/phosphoric etching on CdTe films: Influence of the etching time and nitric acid concentration",

abstract = "The chemical etch of CdTe surfaces with a mixture of phosphoric and nitric acids is used in research labs in order to enhance the back-contact formation in CdS/CdTe solar cells. However, the possible passivation effect of this approach has not been studied. In this work we report an investigation about the etching effect of nitric/phosphoric acid mixtures with different etching times (0, 30, 40 and 50 s) and variable concentrations of the nitric acid upon the surface recombination velocity of CdTe films deposited by close space vapor transport. Surface recombination velocities with values as low as 93 cm/s were achieved.",

keywords = "CdTe, Passivation, Photoacoustic, Photoluminescence, Surface recombination velocity, Thin film",

author = "O. Vigil-Gal{\'a}n and A. Cruz-Orea and C. Mej{\'i}a-Garc{\'i}a and J. Fandi{\~n}o and Garc{\'i}a-S{\'a}nchez, {M. F.}",

year = "2011",

month = aug,

day = "31",

doi = "10.1016/j.tsf.2010.12.124",

language = "Ingl{\'e}s",

volume = "519",

pages = "7164--7167",

journal = "Thin Solid Films",

issn = "0040-6090",

number = "21",

}

TY - JOUR

T1 - Passivation properties of nitric/phosphoric etching on CdTe films

T2 - Influence of the etching time and nitric acid concentration

AU - Vigil-Galán, O.

AU - Cruz-Orea, A.

AU - Mejía-García, C.

AU - Fandiño, J.

AU - García-Sánchez, M. F.

PY - 2011/8/31

Y1 - 2011/8/31

N2 - The chemical etch of CdTe surfaces with a mixture of phosphoric and nitric acids is used in research labs in order to enhance the back-contact formation in CdS/CdTe solar cells. However, the possible passivation effect of this approach has not been studied. In this work we report an investigation about the etching effect of nitric/phosphoric acid mixtures with different etching times (0, 30, 40 and 50 s) and variable concentrations of the nitric acid upon the surface recombination velocity of CdTe films deposited by close space vapor transport. Surface recombination velocities with values as low as 93 cm/s were achieved.

AB - The chemical etch of CdTe surfaces with a mixture of phosphoric and nitric acids is used in research labs in order to enhance the back-contact formation in CdS/CdTe solar cells. However, the possible passivation effect of this approach has not been studied. In this work we report an investigation about the etching effect of nitric/phosphoric acid mixtures with different etching times (0, 30, 40 and 50 s) and variable concentrations of the nitric acid upon the surface recombination velocity of CdTe films deposited by close space vapor transport. Surface recombination velocities with values as low as 93 cm/s were achieved.

KW - CdTe

KW - Passivation

KW - Photoacoustic

KW - Photoluminescence

KW - Surface recombination velocity

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=80052138369&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2010.12.124

DO - 10.1016/j.tsf.2010.12.124

M3 - Artículo

AN - SCOPUS:80052138369

SN - 0040-6090

VL - 519

SP - 7164

EP - 7167

JO - Thin Solid Films

JF - Thin Solid Films

IS - 21

ER -

Passivation properties of nitric/phosphoric etching on CdTe films: Influence of the etching time and nitric acid concentration

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