Al-doped zinc oxide film deposition in function of power by ac bipolar pulse in reactive magnetron sputtering

J. García-García, J. Pacheco-Sotelo, R. Valdivia-Barrientos, C. Rivera-Rodríguez, M. Pacheco-Pacheco, Jean Jacques Gonzalez, G. Soria-Arguello, M. Nieto-Pérez

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

1 Cita (Scopus)

Resumen

A reactive magnetron sputtering reactor powered by an ac bipolar pulse power source was used to grow aluminum-doped zinc oxide (ZnO:Al or AZO) on polypropylene films. The ac bipolar pulses and the electrode configuration assure a stable and arc-free material deposition at room temperature. The films were obtained in a reactive atmosphere of argon and oxygen at 1-Pa pressure and power ranges from 20 to 36 W. The surface of the AZO film was characterized using scanning electron microscopy.

Idioma originalInglés
Número de artículo5975248
Páginas (desde-hasta)2484-2485
Número de páginas2
PublicaciónIEEE Transactions on Plasma Science
Volumen39
N.º11 PART 1
DOI
EstadoPublicada - nov. 2011
Publicado de forma externa

Huella

Profundice en los temas de investigación de 'Al-doped zinc oxide film deposition in function of power by ac bipolar pulse in reactive magnetron sputtering'. En conjunto forman una huella única.

Citar esto