Al-doped zinc oxide film deposition in function of power by ac bipolar pulse in reactive magnetron sputtering

J. García-García, J. Pacheco-Sotelo, R. Valdivia-Barrientos, C. Rivera-Rodríguez, M. Pacheco-Pacheco, Jean Jacques Gonzalez, G. Soria-Arguello, M. Nieto-Pérez

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A reactive magnetron sputtering reactor powered by an ac bipolar pulse power source was used to grow aluminum-doped zinc oxide (ZnO:Al or AZO) on polypropylene films. The ac bipolar pulses and the electrode configuration assure a stable and arc-free material deposition at room temperature. The films were obtained in a reactive atmosphere of argon and oxygen at 1-Pa pressure and power ranges from 20 to 36 W. The surface of the AZO film was characterized using scanning electron microscopy.

Original languageEnglish
Article number5975248
Pages (from-to)2484-2485
Number of pages2
JournalIEEE Transactions on Plasma Science
Volume39
Issue number11 PART 1
DOIs
StatePublished - Nov 2011
Externally publishedYes

Keywords

  • Plasma materials processing
  • sputtering

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