Abstract
Quantum well (QW) structures of AlxGa1-xAs/GaAs were characterized by photoluminescence technique as a function of the temperature between 10 and 300 K. The structures were grown on a 500 nm thick GaAs buffer layer with Molecular Beam Epitaxy technique. We have studied the properties of in-situ Cl2-etched GaAs surfaces and overgrown QW structures as a function of the etching temperature (70 and 200 °C). Several models were used to fit the experimental points. Best fit to experimental points was obtained with the Pässler model.
Translated title of the contribution | Dependencia de la temperatura de las transiciones ópticas en estructuras de pozos cuánticos Al x Ga 1– x As/GaAs cultivadas por epitaxia de haz molecular |
---|---|
Original language | English |
Pages (from-to) | 161-164 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 490 |
Issue number | 2 |
DOIs | |
State | Published - 1 Nov 2005 |
Event | IMRC 2004 - Duration: 22 Aug 2004 → 26 Aug 2004 |
Keywords
- AlGaAs/Gas
- Molecular beam epitaxy
- Optical transitions
- Photoluminescence