Temperature dependence of optical transitions in Al_xGa _1-xAs/GaAs quantum well structures grown by molecular beam epitaxy

Engineering & Materials Science

• Optical transitions 100%
• Semiconductor quantum wells 74%
• Molecular beam epitaxy 73%
• Photoluminescence 38%
• Buffer layers 33%
• Etching 25%
• Temperature 19%

Chemistry

• Molecular Beam Epitaxy 68%
• Optical Transition 65%
• Etching 42%
• Photoluminescence 36%
• Buffer Solution 30%
• Surface 15%

Physics & Astronomy

• optical transition 49%
• molecular beam epitaxy 40%
• quantum wells 36%
• temperature dependence 30%
• buffers 20%
• etching 17%
• photoluminescence 16%
• temperature 14%