Temperature dependence of optical transitions in AlxGa 1-xAs/GaAs quantum well structures grown by molecular beam epitaxy

A. Caballero-Rosas; C. Mejía-García; G. Contreras-Puente; M. López-López

doi:10.1016/j.tsf.2005.04.048

Temperature dependence of optical transitions in Al_xGa _1-xAs/GaAs quantum well structures grown by molecular beam epitaxy

Título traducido de la contribución: Dependencia de la temperatura de las transiciones ópticas en estructuras de pozos cuánticos Al x Ga 1– x As/GaAs cultivadas por epitaxia de haz molecular

A. Caballero-Rosas, C. Mejía-García, G. Contreras-Puente, M. López-López

Escuela Superior de Física y Matemáticas (ESFM)

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

7 Citas (Scopus)

Resumen

Quantum well (QW) structures of Al_xGa_1-xAs/GaAs were characterized by photoluminescence technique as a function of the temperature between 10 and 300 K. The structures were grown on a 500 nm thick GaAs buffer layer with Molecular Beam Epitaxy technique. We have studied the properties of in-situ Cl₂-etched GaAs surfaces and overgrown QW structures as a function of the etching temperature (70 and 200 °C). Several models were used to fit the experimental points. Best fit to experimental points was obtained with the Pässler model.

Título traducido de la contribución	Dependencia de la temperatura de las transiciones ópticas en estructuras de pozos cuánticos Al x Ga 1– x As/GaAs cultivadas por epitaxia de haz molecular
Idioma original	Inglés
Páginas (desde-hasta)	161-164
Número de páginas	4
Publicación	Thin Solid Films
Volumen	490
N.º	2
DOI	https://doi.org/10.1016/j.tsf.2005.04.048
Estado	Publicada - 1 nov. 2005
Evento	IMRC 2004 - Duración: 22 ago. 2004 → 26 ago. 2004

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title = "Temperature dependence of optical transitions in AlxGa 1-xAs/GaAs quantum well structures grown by molecular beam epitaxy",

abstract = "Quantum well (QW) structures of AlxGa1-xAs/GaAs were characterized by photoluminescence technique as a function of the temperature between 10 and 300 K. The structures were grown on a 500 nm thick GaAs buffer layer with Molecular Beam Epitaxy technique. We have studied the properties of in-situ Cl2-etched GaAs surfaces and overgrown QW structures as a function of the etching temperature (70 and 200 °C). Several models were used to fit the experimental points. Best fit to experimental points was obtained with the P{\"a}ssler model.",

keywords = "AlGaAs/Gas, Molecular beam epitaxy, Optical transitions, Photoluminescence",

author = "A. Caballero-Rosas and C. Mej{\'i}a-Garc{\'i}a and G. Contreras-Puente and M. L{\'o}pez-L{\'o}pez",

note = "Funding Information: We thank Dr. Jaime Ortiz for reading the manuscript. The work was financially supported by CONACyT, Mexico, Project 34074-U and Deutsche Akademische Austachdienst, Bonn, Germany.; IMRC 2004 ; Conference date: 22-08-2004 Through 26-08-2004",

year = "2005",

month = nov,

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doi = "10.1016/j.tsf.2005.04.048",

language = "Ingl{\'e}s",

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TY - JOUR

T1 - Temperature dependence of optical transitions in AlxGa 1-xAs/GaAs quantum well structures grown by molecular beam epitaxy

AU - Caballero-Rosas, A.

AU - Mejía-García, C.

AU - Contreras-Puente, G.

AU - López-López, M.

N1 - Funding Information: We thank Dr. Jaime Ortiz for reading the manuscript. The work was financially supported by CONACyT, Mexico, Project 34074-U and Deutsche Akademische Austachdienst, Bonn, Germany.

PY - 2005/11/1

Y1 - 2005/11/1

N2 - Quantum well (QW) structures of AlxGa1-xAs/GaAs were characterized by photoluminescence technique as a function of the temperature between 10 and 300 K. The structures were grown on a 500 nm thick GaAs buffer layer with Molecular Beam Epitaxy technique. We have studied the properties of in-situ Cl2-etched GaAs surfaces and overgrown QW structures as a function of the etching temperature (70 and 200 °C). Several models were used to fit the experimental points. Best fit to experimental points was obtained with the Pässler model.

AB - Quantum well (QW) structures of AlxGa1-xAs/GaAs were characterized by photoluminescence technique as a function of the temperature between 10 and 300 K. The structures were grown on a 500 nm thick GaAs buffer layer with Molecular Beam Epitaxy technique. We have studied the properties of in-situ Cl2-etched GaAs surfaces and overgrown QW structures as a function of the etching temperature (70 and 200 °C). Several models were used to fit the experimental points. Best fit to experimental points was obtained with the Pässler model.

KW - AlGaAs/Gas

KW - Molecular beam epitaxy

KW - Optical transitions

KW - Photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=24044548026&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.04.048

DO - 10.1016/j.tsf.2005.04.048

M3 - Artículo de la conferencia

AN - SCOPUS:24044548026

SN - 0040-6090

VL - 490

SP - 161

EP - 164

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2

T2 - IMRC 2004

Y2 - 22 August 2004 through 26 August 2004

ER -