Oxygen implantation and diffusion in pure titanium by an rf inductively coupled plasma

R. Valencia-Alvarado, A. de la Piedad-Beneitez, R. López-Callejas, S. R. Barocio, A. Mercado-Cabrera, R. Peña-Eguiluz, A. E. Muñoz-Castro, J. de la Rosa-Vázquez

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Abstract

The superficial oxidation of pure titanium, 9 mm diameter, 5 mm thick disc samples by implantation and diffusion from inductively coupled plasmas is reported. Such rf plasmas were generated in a 15 l cylindrical Pyrex-like glass chamber containing pure circulating oxygen. A quarter wavelength solenoidal antenna capable of transmitting 500 W at 13.54 MHz was externally wound around the chamber and connected to an rf generator capable of up to 1200 W through an automatic matching network. The oxidation process was carried out for 6 h periods while varying the gas pressure between 1 × 102 and 5 × 10-1 Pa and the sample bias up to -3000 V DC. It was found that the sample temperature was a function both of the plasma density and the bias voltage. Without bias, the plasma heated the sample up to ∼200 °C, and with maximal bias voltage, the substrate was heated to 680 °C. At the latter temperature, the presence of the rutile phase was particularly evident in X-ray diffraction patterns. According to EDX data, the average oxygen to titanium ratio rose, from ∼0.06 for an untreated reference sample, to a ∼1.7 value for samples treated up to 680 °C.
Original languageAmerican English
JournalVacuum
DOIs
StatePublished - 1 May 2009

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Inductively coupled plasma
Bias voltage
Titanium
implantation
titanium
Oxygen
Plasmas
Oxidation
Plasma density
oxygen
Diffraction patterns
Energy dispersive spectroscopy
Gases
Antennas
X ray diffraction
Glass
Wavelength
Temperature
Substrates
chambers

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Valencia-Alvarado, R., de la Piedad-Beneitez, A., López-Callejas, R., Barocio, S. R., Mercado-Cabrera, A., Peña-Eguiluz, R., ... de la Rosa-Vázquez, J. (2009). Oxygen implantation and diffusion in pure titanium by an rf inductively coupled plasma. Vacuum. https://doi.org/10.1016/j.vacuum.2009.01.078
Valencia-Alvarado, R. ; de la Piedad-Beneitez, A. ; López-Callejas, R. ; Barocio, S. R. ; Mercado-Cabrera, A. ; Peña-Eguiluz, R. ; Muñoz-Castro, A. E. ; de la Rosa-Vázquez, J. / Oxygen implantation and diffusion in pure titanium by an rf inductively coupled plasma. In: Vacuum. 2009.
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abstract = "The superficial oxidation of pure titanium, 9 mm diameter, 5 mm thick disc samples by implantation and diffusion from inductively coupled plasmas is reported. Such rf plasmas were generated in a 15 l cylindrical Pyrex-like glass chamber containing pure circulating oxygen. A quarter wavelength solenoidal antenna capable of transmitting 500 W at 13.54 MHz was externally wound around the chamber and connected to an rf generator capable of up to 1200 W through an automatic matching network. The oxidation process was carried out for 6 h periods while varying the gas pressure between 1 × 102 and 5 × 10-1 Pa and the sample bias up to -3000 V DC. It was found that the sample temperature was a function both of the plasma density and the bias voltage. Without bias, the plasma heated the sample up to ∼200 °C, and with maximal bias voltage, the substrate was heated to 680 °C. At the latter temperature, the presence of the rutile phase was particularly evident in X-ray diffraction patterns. According to EDX data, the average oxygen to titanium ratio rose, from ∼0.06 for an untreated reference sample, to a ∼1.7 value for samples treated up to 680 °C.",
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Valencia-Alvarado, R, de la Piedad-Beneitez, A, López-Callejas, R, Barocio, SR, Mercado-Cabrera, A, Peña-Eguiluz, R, Muñoz-Castro, AE & de la Rosa-Vázquez, J 2009, 'Oxygen implantation and diffusion in pure titanium by an rf inductively coupled plasma', Vacuum. https://doi.org/10.1016/j.vacuum.2009.01.078

Oxygen implantation and diffusion in pure titanium by an rf inductively coupled plasma. / Valencia-Alvarado, R.; de la Piedad-Beneitez, A.; López-Callejas, R.; Barocio, S. R.; Mercado-Cabrera, A.; Peña-Eguiluz, R.; Muñoz-Castro, A. E.; de la Rosa-Vázquez, J.

In: Vacuum, 01.05.2009.

Research output: Contribution to journalArticle

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T1 - Oxygen implantation and diffusion in pure titanium by an rf inductively coupled plasma

AU - Valencia-Alvarado, R.

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AU - López-Callejas, R.

AU - Barocio, S. R.

AU - Mercado-Cabrera, A.

AU - Peña-Eguiluz, R.

AU - Muñoz-Castro, A. E.

AU - de la Rosa-Vázquez, J.

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N2 - The superficial oxidation of pure titanium, 9 mm diameter, 5 mm thick disc samples by implantation and diffusion from inductively coupled plasmas is reported. Such rf plasmas were generated in a 15 l cylindrical Pyrex-like glass chamber containing pure circulating oxygen. A quarter wavelength solenoidal antenna capable of transmitting 500 W at 13.54 MHz was externally wound around the chamber and connected to an rf generator capable of up to 1200 W through an automatic matching network. The oxidation process was carried out for 6 h periods while varying the gas pressure between 1 × 102 and 5 × 10-1 Pa and the sample bias up to -3000 V DC. It was found that the sample temperature was a function both of the plasma density and the bias voltage. Without bias, the plasma heated the sample up to ∼200 °C, and with maximal bias voltage, the substrate was heated to 680 °C. At the latter temperature, the presence of the rutile phase was particularly evident in X-ray diffraction patterns. According to EDX data, the average oxygen to titanium ratio rose, from ∼0.06 for an untreated reference sample, to a ∼1.7 value for samples treated up to 680 °C.

AB - The superficial oxidation of pure titanium, 9 mm diameter, 5 mm thick disc samples by implantation and diffusion from inductively coupled plasmas is reported. Such rf plasmas were generated in a 15 l cylindrical Pyrex-like glass chamber containing pure circulating oxygen. A quarter wavelength solenoidal antenna capable of transmitting 500 W at 13.54 MHz was externally wound around the chamber and connected to an rf generator capable of up to 1200 W through an automatic matching network. The oxidation process was carried out for 6 h periods while varying the gas pressure between 1 × 102 and 5 × 10-1 Pa and the sample bias up to -3000 V DC. It was found that the sample temperature was a function both of the plasma density and the bias voltage. Without bias, the plasma heated the sample up to ∼200 °C, and with maximal bias voltage, the substrate was heated to 680 °C. At the latter temperature, the presence of the rutile phase was particularly evident in X-ray diffraction patterns. According to EDX data, the average oxygen to titanium ratio rose, from ∼0.06 for an untreated reference sample, to a ∼1.7 value for samples treated up to 680 °C.

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Valencia-Alvarado R, de la Piedad-Beneitez A, López-Callejas R, Barocio SR, Mercado-Cabrera A, Peña-Eguiluz R et al. Oxygen implantation and diffusion in pure titanium by an rf inductively coupled plasma. Vacuum. 2009 May 1. https://doi.org/10.1016/j.vacuum.2009.01.078