TY - GEN
T1 - Composition of metal layers in CMOS-MEMS micromachining process
AU - Granados-Rojas, Benito
AU - Reyes-Barranca, Mario Alfredo
AU - Flores-Nava, Luis Martin
AU - Abarca-Jimenez, Griselda Stephany
AU - Aleman-Arce, Miguel Angel
AU - Gonzalez-Navarro, Yesenia Eleonor
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/9
Y1 - 2019/9
N2 - In this work some representative mechanical and materials-related issues in the design and fabrication of CMOS-MEMS devices are reviewed, especially those appearing in the further on-chip micromachining process needed to release MEMS structures within conventional CMOS integrated circuits. CMOS-MEMS is a micro-sensor and micro-actuator development technique consisting in applying either an etching or deposition process to previously designed and fabricated CMOS circuitry, in order to enhance its mechanical, optical, chemical or so properties achieving a micro-electromechanical behavior. In the case of material removal, also known as micromachining, a surface or bulk process, usually a wet chemical etching, is used to release metallic structures embedded in insulating glass layers. Nevertheless, the composition of those metallic structures may vary from a CMOS fabrication technology to another and should not be neglected during the etching process.
AB - In this work some representative mechanical and materials-related issues in the design and fabrication of CMOS-MEMS devices are reviewed, especially those appearing in the further on-chip micromachining process needed to release MEMS structures within conventional CMOS integrated circuits. CMOS-MEMS is a micro-sensor and micro-actuator development technique consisting in applying either an etching or deposition process to previously designed and fabricated CMOS circuitry, in order to enhance its mechanical, optical, chemical or so properties achieving a micro-electromechanical behavior. In the case of material removal, also known as micromachining, a surface or bulk process, usually a wet chemical etching, is used to release metallic structures embedded in insulating glass layers. Nevertheless, the composition of those metallic structures may vary from a CMOS fabrication technology to another and should not be neglected during the etching process.
KW - Aluminum
KW - CMOS-MEMS
KW - Etching
KW - Inertial
KW - MEMS
KW - Micromachining
KW - Sensor
KW - Silicon dioxide
KW - TiN
UR - http://www.scopus.com/inward/record.url?scp=85075099663&partnerID=8YFLogxK
U2 - 10.1109/ICEEE.2019.8884506
DO - 10.1109/ICEEE.2019.8884506
M3 - Contribución a la conferencia
AN - SCOPUS:85075099663
T3 - 2019 16th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2019
BT - 2019 16th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2019
Y2 - 11 September 2019 through 13 September 2019
ER -