Voltage source circuit based on CMOS floating-gate memory

Jesús De La Cruz Alejo, Victor Ponce, Felipe Gómez Castañeda, José A.Moreno Cadenas

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

This paper present a new circuit designed to support high accuracy reference voltages over a nearly full range of the power supply. To achieve this, the circuit is designed to be efficient utilizing a CMOS floating gate memory fabricated in 1.2 μm CMOS process. The memory stores voltages as charge on the floating gate of a pMOS transistor. The output voltages of the circuit are easily programming by simply modifying the value of the floating gate through the tunnelling and injection hot electrons mechanisms. Also, the circuit can drive a resistive load with the advantage of reduced both silicon area and dissipated power on chip.

Idioma originalInglés
Título de la publicación alojada2007 4th International Conference on Electrical and Electronics Engineering, ICEEE 2007
Páginas400-403
Número de páginas4
DOI
EstadoPublicada - 2007
Evento2007 4th International Conference on Electrical and Electronics Engineering, ICEEE 2007 - Mexico City, México
Duración: 5 sep. 20077 sep. 2007

Serie de la publicación

Nombre2007 4th International Conference on Electrical and Electronics Engineering, ICEEE 2007

Conferencia

Conferencia2007 4th International Conference on Electrical and Electronics Engineering, ICEEE 2007
País/TerritorioMéxico
CiudadMexico City
Período5/09/077/09/07

Huella

Profundice en los temas de investigación de 'Voltage source circuit based on CMOS floating-gate memory'. En conjunto forman una huella única.

Citar esto