Resumen
High concentrations of substitutional Al atoms were achieved in Ge through implantation and laser annealing with a XeCl laser. The incorporation of Al in substitutional sites produces vibrational local modes (VLM's) of Γ15 symmetry which are observed by Raman spectroscopy.
Idioma original | Inglés |
---|---|
Páginas (desde-hasta) | 857-859 |
Número de páginas | 3 |
Publicación | Solid State Communications |
Volumen | 53 |
N.º | 10 |
DOI | |
Estado | Publicada - mar. 1985 |
Publicado de forma externa | Sí |