Vibrational local mode of A1-implanted and laser annealed Ge

G. Contreras; M. Cardona; A. Compaan

doi:10.1016/0038-1098(85)90067-5

Vibrational local mode of A1-implanted and laser annealed Ge

G. Contreras, M. Cardona, A. Compaan

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

High concentrations of substitutional Al atoms were achieved in Ge through implantation and laser annealing with a XeCl laser. The incorporation of Al in substitutional sites produces vibrational local modes (VLM's) of Γ₁₅ symmetry which are observed by Raman spectroscopy.

Original language	English
Pages (from-to)	857-859
Number of pages	3
Journal	Solid State Communications
Volume	53
Issue number	10
DOIs	https://doi.org/10.1016/0038-1098(85)90067-5
State	Published - Mar 1985
Externally published	Yes

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@article{ec48d1baaaee48a7a4684511a1b5b246,

title = "Vibrational local mode of A1-implanted and laser annealed Ge",

abstract = "High concentrations of substitutional Al atoms were achieved in Ge through implantation and laser annealing with a XeCl laser. The incorporation of Al in substitutional sites produces vibrational local modes (VLM's) of Γ15 symmetry which are observed by Raman spectroscopy.",

author = "G. Contreras and M. Cardona and A. Compaan",

year = "1985",

month = mar,

doi = "10.1016/0038-1098(85)90067-5",

language = "Ingl{\'e}s",

volume = "53",

pages = "857--859",

journal = "Solid State Communications",

issn = "0038-1098",

number = "10",

}

TY - JOUR

T1 - Vibrational local mode of A1-implanted and laser annealed Ge

AU - Contreras, G.

AU - Cardona, M.

AU - Compaan, A.

PY - 1985/3

Y1 - 1985/3

N2 - High concentrations of substitutional Al atoms were achieved in Ge through implantation and laser annealing with a XeCl laser. The incorporation of Al in substitutional sites produces vibrational local modes (VLM's) of Γ15 symmetry which are observed by Raman spectroscopy.

AB - High concentrations of substitutional Al atoms were achieved in Ge through implantation and laser annealing with a XeCl laser. The incorporation of Al in substitutional sites produces vibrational local modes (VLM's) of Γ15 symmetry which are observed by Raman spectroscopy.

UR - http://www.scopus.com/inward/record.url?scp=0022026576&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(85)90067-5

DO - 10.1016/0038-1098(85)90067-5

M3 - Artículo

SN - 0038-1098

VL - 53

SP - 857

EP - 859

JO - Solid State Communications

JF - Solid State Communications

IS - 10

ER -

Vibrational local mode of A1-implanted and laser annealed Ge

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