Very low photo-CVD deposition rate process for high quality thin SiO 2 films

V. M. Sanchez-Z; J. Munguia; M. Estrada

doi:10.1109/ICCDCS.2002.1004067

Very low photo-CVD deposition rate process for high quality thin SiO ₂ films

V. M. Sanchez-Z, J. Munguia, M. Estrada

Producción científica: Contribución a una conferencia › Artículo › revisión exhaustiva

Resumen

Very low deposition rates, below 0.56 nm/min, of SiO₂ were investigated using photo-induced chemical vapor deposition (photo-CVD). These low deposition rates are adequate to grow very thin and ultra thin layers of SiO₂. Details on the design of the reaction chamber, reactive gases and process parameters to obtain the desired deposition regime are presented. Dependence of deposition rate on pressure in the chamber is discussed. Deposited layers were characterized using I-V and C-V techniques.

Idioma original	Inglés
DOI	https://doi.org/10.1109/ICCDCS.2002.1004067
Estado	Publicada - 2002
Publicado de forma externa	Sí
Evento	4th IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS 2002 - Oranjestad, Aruba, Países Bajos Duración: 17 abr. 2002 → 19 abr. 2002

Conferencia

Conferencia	4th IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS 2002
País/Territorio	Países Bajos
Ciudad	Oranjestad, Aruba
Período	17/04/02 → 19/04/02

Acceder al documento

10.1109/ICCDCS.2002.1004067

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abstract = "Very low deposition rates, below 0.56 nm/min, of SiO2 were investigated using photo-induced chemical vapor deposition (photo-CVD). These low deposition rates are adequate to grow very thin and ultra thin layers of SiO2. Details on the design of the reaction chamber, reactive gases and process parameters to obtain the desired deposition regime are presented. Dependence of deposition rate on pressure in the chamber is discussed. Deposited layers were characterized using I-V and C-V techniques.",

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