Very low photo-CVD deposition rate process for high quality thin SiO 2 films

V. M. Sanchez-Z; J. Munguia; M. Estrada

doi:10.1109/ICCDCS.2002.1004067

Very low photo-CVD deposition rate process for high quality thin SiO ₂ films

V. M. Sanchez-Z, J. Munguia, M. Estrada

Research output: Contribution to conference › Paper › peer-review

Abstract

Very low deposition rates, below 0.56 nm/min, of SiO₂ were investigated using photo-induced chemical vapor deposition (photo-CVD). These low deposition rates are adequate to grow very thin and ultra thin layers of SiO₂. Details on the design of the reaction chamber, reactive gases and process parameters to obtain the desired deposition regime are presented. Dependence of deposition rate on pressure in the chamber is discussed. Deposited layers were characterized using I-V and C-V techniques.

Original language	English
DOIs	https://doi.org/10.1109/ICCDCS.2002.1004067
State	Published - 2002
Externally published	Yes
Event	4th IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS 2002 - Oranjestad, Aruba, Netherlands Duration: 17 Apr 2002 → 19 Apr 2002

Conference

Conference	4th IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS 2002
Country/Territory	Netherlands
City	Oranjestad, Aruba
Period	17/04/02 → 19/04/02

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10.1109/ICCDCS.2002.1004067

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title = "Very low photo-CVD deposition rate process for high quality thin SiO 2 films",

abstract = "Very low deposition rates, below 0.56 nm/min, of SiO2 were investigated using photo-induced chemical vapor deposition (photo-CVD). These low deposition rates are adequate to grow very thin and ultra thin layers of SiO2. Details on the design of the reaction chamber, reactive gases and process parameters to obtain the desired deposition regime are presented. Dependence of deposition rate on pressure in the chamber is discussed. Deposited layers were characterized using I-V and C-V techniques.",

author = "Sanchez-Z, {V. M.} and J. Munguia and M. Estrada",

year = "2002",

doi = "10.1109/ICCDCS.2002.1004067",

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note = "4th IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS 2002 ; Conference date: 17-04-2002 Through 19-04-2002",

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AU - Sanchez-Z, V. M.

AU - Munguia, J.

AU - Estrada, M.

PY - 2002

Y1 - 2002

N2 - Very low deposition rates, below 0.56 nm/min, of SiO2 were investigated using photo-induced chemical vapor deposition (photo-CVD). These low deposition rates are adequate to grow very thin and ultra thin layers of SiO2. Details on the design of the reaction chamber, reactive gases and process parameters to obtain the desired deposition regime are presented. Dependence of deposition rate on pressure in the chamber is discussed. Deposited layers were characterized using I-V and C-V techniques.

AB - Very low deposition rates, below 0.56 nm/min, of SiO2 were investigated using photo-induced chemical vapor deposition (photo-CVD). These low deposition rates are adequate to grow very thin and ultra thin layers of SiO2. Details on the design of the reaction chamber, reactive gases and process parameters to obtain the desired deposition regime are presented. Dependence of deposition rate on pressure in the chamber is discussed. Deposited layers were characterized using I-V and C-V techniques.

UR - http://www.scopus.com/inward/record.url?scp=84900321072&partnerID=8YFLogxK

U2 - 10.1109/ICCDCS.2002.1004067

DO - 10.1109/ICCDCS.2002.1004067

M3 - Artículo

T2 - 4th IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS 2002

Y2 - 17 April 2002 through 19 April 2002

ER -

Very low photo-CVD deposition rate process for high quality thin SiO ₂ films

Abstract

Conference

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