Two ways of porous Si photoluminescence excitation

T. V. Torchinskaya; N. B. Korsunskaya; L. Yu Khomenkova; M. K. Sheinkman; N. P. Baran; A. Misiuk; B. Surma; B. Dzhumaev

doi:10.1016/S0921-5107(97)00252-3

Two ways of porous Si photoluminescence excitation

T. V. Torchinskaya, N. B. Korsunskaya, L. Yu Khomenkova, M. K. Sheinkman, N. P. Baran, A. Misiuk, B. Surma, B. Dzhumaev

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

11 Citas (Scopus)

Resumen

The mechanism of photoluminescence excitation (PLE) in porous silicon (PS) is studied. The investigation of the PS aging process by photoluminescence (PL), PLE, EPR, Auger, FTIR and SIMS methods show that two PLE bands correspond to different substances on a silicon wire surface. One of them is the species which is desorbed during aging with an activation energy ≈ 0.5-0.6 eV. The energy transfer from this species (absorption centers) to luminescence centers which may be located in Si wire, Si/SiO interface or silicon oxide, is supposed. The nature of this species is discussed. The second substance is silicon oxide, probably.

Idioma original	Inglés
Páginas (desde-hasta)	162-165
Número de páginas	4
Publicación	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volumen	51
N.º	1-3
DOI	https://doi.org/10.1016/S0921-5107(97)00252-3
Estado	Publicada - 27 feb. 1998
Publicado de forma externa	Sí

Acceder al documento

10.1016/S0921-5107(97)00252-3

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

@article{9421f8ca8d7a48fe90ba5b48319c4c6a,

title = "Two ways of porous Si photoluminescence excitation",

abstract = "The mechanism of photoluminescence excitation (PLE) in porous silicon (PS) is studied. The investigation of the PS aging process by photoluminescence (PL), PLE, EPR, Auger, FTIR and SIMS methods show that two PLE bands correspond to different substances on a silicon wire surface. One of them is the species which is desorbed during aging with an activation energy ≈ 0.5-0.6 eV. The energy transfer from this species (absorption centers) to luminescence centers which may be located in Si wire, Si/SiO interface or silicon oxide, is supposed. The nature of this species is discussed. The second substance is silicon oxide, probably.",

keywords = "Absorption center, Photoluminescence excitation, Porous silicon",

author = "Torchinskaya, {T. V.} and Korsunskaya, {N. B.} and Khomenkova, {L. Yu} and Sheinkman, {M. K.} and Baran, {N. P.} and A. Misiuk and B. Surma and B. Dzhumaev",

year = "1998",

month = feb,

day = "27",

doi = "10.1016/S0921-5107(97)00252-3",

language = "Ingl{\'e}s",

volume = "51",

pages = "162--165",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

number = "1-3",

}

TY - JOUR

T1 - Two ways of porous Si photoluminescence excitation

AU - Torchinskaya, T. V.

AU - Korsunskaya, N. B.

AU - Khomenkova, L. Yu

AU - Sheinkman, M. K.

AU - Baran, N. P.

AU - Misiuk, A.

AU - Surma, B.

AU - Dzhumaev, B.

PY - 1998/2/27

Y1 - 1998/2/27

N2 - The mechanism of photoluminescence excitation (PLE) in porous silicon (PS) is studied. The investigation of the PS aging process by photoluminescence (PL), PLE, EPR, Auger, FTIR and SIMS methods show that two PLE bands correspond to different substances on a silicon wire surface. One of them is the species which is desorbed during aging with an activation energy ≈ 0.5-0.6 eV. The energy transfer from this species (absorption centers) to luminescence centers which may be located in Si wire, Si/SiO interface or silicon oxide, is supposed. The nature of this species is discussed. The second substance is silicon oxide, probably.

AB - The mechanism of photoluminescence excitation (PLE) in porous silicon (PS) is studied. The investigation of the PS aging process by photoluminescence (PL), PLE, EPR, Auger, FTIR and SIMS methods show that two PLE bands correspond to different substances on a silicon wire surface. One of them is the species which is desorbed during aging with an activation energy ≈ 0.5-0.6 eV. The energy transfer from this species (absorption centers) to luminescence centers which may be located in Si wire, Si/SiO interface or silicon oxide, is supposed. The nature of this species is discussed. The second substance is silicon oxide, probably.

KW - Absorption center

KW - Photoluminescence excitation

KW - Porous silicon

UR - http://www.scopus.com/inward/record.url?scp=0000278650&partnerID=8YFLogxK

U2 - 10.1016/S0921-5107(97)00252-3

DO - 10.1016/S0921-5107(97)00252-3

M3 - Artículo

SN - 0921-5107

VL - 51

SP - 162

EP - 165

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-3

ER -

Two ways of porous Si photoluminescence excitation

Resumen

Acceder al documento

Otros archivos y enlaces

Huella

Citar esto