Two ways of porous Si photoluminescence excitation

T. V. Torchinskaya; N. B. Korsunskaya; L. Yu Khomenkova; M. K. Sheinkman; N. P. Baran; A. Misiuk; B. Surma; B. Dzhumaev

doi:10.1016/S0921-5107(97)00252-3

Two ways of porous Si photoluminescence excitation

T. V. Torchinskaya, N. B. Korsunskaya, L. Yu Khomenkova, M. K. Sheinkman, N. P. Baran, A. Misiuk, B. Surma, B. Dzhumaev

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11 Scopus citations

Abstract

The mechanism of photoluminescence excitation (PLE) in porous silicon (PS) is studied. The investigation of the PS aging process by photoluminescence (PL), PLE, EPR, Auger, FTIR and SIMS methods show that two PLE bands correspond to different substances on a silicon wire surface. One of them is the species which is desorbed during aging with an activation energy ≈ 0.5-0.6 eV. The energy transfer from this species (absorption centers) to luminescence centers which may be located in Si wire, Si/SiO interface or silicon oxide, is supposed. The nature of this species is discussed. The second substance is silicon oxide, probably.

Original language	English
Pages (from-to)	162-165
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	51
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(97)00252-3
State	Published - 27 Feb 1998
Externally published	Yes

Keywords

Absorption center
Photoluminescence excitation
Porous silicon

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10.1016/S0921-5107(97)00252-3

Cite this

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title = "Two ways of porous Si photoluminescence excitation",

abstract = "The mechanism of photoluminescence excitation (PLE) in porous silicon (PS) is studied. The investigation of the PS aging process by photoluminescence (PL), PLE, EPR, Auger, FTIR and SIMS methods show that two PLE bands correspond to different substances on a silicon wire surface. One of them is the species which is desorbed during aging with an activation energy ≈ 0.5-0.6 eV. The energy transfer from this species (absorption centers) to luminescence centers which may be located in Si wire, Si/SiO interface or silicon oxide, is supposed. The nature of this species is discussed. The second substance is silicon oxide, probably.",

keywords = "Absorption center, Photoluminescence excitation, Porous silicon",

author = "Torchinskaya, {T. V.} and Korsunskaya, {N. B.} and Khomenkova, {L. Yu} and Sheinkman, {M. K.} and Baran, {N. P.} and A. Misiuk and B. Surma and B. Dzhumaev",

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doi = "10.1016/S0921-5107(97)00252-3",

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volume = "51",

pages = "162--165",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

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TY - JOUR

T1 - Two ways of porous Si photoluminescence excitation

AU - Torchinskaya, T. V.

AU - Korsunskaya, N. B.

AU - Khomenkova, L. Yu

AU - Sheinkman, M. K.

AU - Baran, N. P.

AU - Misiuk, A.

AU - Surma, B.

AU - Dzhumaev, B.

PY - 1998/2/27

Y1 - 1998/2/27

N2 - The mechanism of photoluminescence excitation (PLE) in porous silicon (PS) is studied. The investigation of the PS aging process by photoluminescence (PL), PLE, EPR, Auger, FTIR and SIMS methods show that two PLE bands correspond to different substances on a silicon wire surface. One of them is the species which is desorbed during aging with an activation energy ≈ 0.5-0.6 eV. The energy transfer from this species (absorption centers) to luminescence centers which may be located in Si wire, Si/SiO interface or silicon oxide, is supposed. The nature of this species is discussed. The second substance is silicon oxide, probably.

AB - The mechanism of photoluminescence excitation (PLE) in porous silicon (PS) is studied. The investigation of the PS aging process by photoluminescence (PL), PLE, EPR, Auger, FTIR and SIMS methods show that two PLE bands correspond to different substances on a silicon wire surface. One of them is the species which is desorbed during aging with an activation energy ≈ 0.5-0.6 eV. The energy transfer from this species (absorption centers) to luminescence centers which may be located in Si wire, Si/SiO interface or silicon oxide, is supposed. The nature of this species is discussed. The second substance is silicon oxide, probably.

KW - Absorption center

KW - Photoluminescence excitation

KW - Porous silicon

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U2 - 10.1016/S0921-5107(97)00252-3

DO - 10.1016/S0921-5107(97)00252-3

M3 - Artículo

SN - 0921-5107

VL - 51

SP - 162

EP - 165

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-3

ER -

Two ways of porous Si photoluminescence excitation

Abstract

Keywords

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