Two sources of excitation of photoluminescence of porous silicon

N. E. Korsunskaya; T. V. Torchinskaya; B. R. Dzhumaev; L. Yu Khomenkova; B. M. Bulakh

doi:10.1134/1.1187246

Two sources of excitation of photoluminescence of porous silicon

N. E. Korsunskaya, T. V. Torchinskaya, B. R. Dzhumaev, L. Yu Khomenkova, B. M. Bulakh

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14 Citas (Scopus)

Resumen

The change occurring in the photoluminescence spectra and the photoluminescence excitation spectra during aging of porous-silicon samples in air and in vacuum has been investigated. It was found that the character of the photoluminescence changes occurring during aging depends on the wavelength of the exciting light: In the case of excitation in the visible-range band of the luminescence excitation spectrum (λ_exc> 490 nm) the photoluminescence decreases and in the case of excitation in the ultraviolet band it predominantly increases. It is shown that the two bands of the luminescence excitation spectrum (visible and ultraviolet) correspond to two different objects on the surface of the porous layer.

Idioma original	Inglés
Páginas (desde-hasta)	773-776
Número de páginas	4
Publicación	Semiconductors
Volumen	31
N.º	8
DOI	https://doi.org/10.1134/1.1187246
Estado	Publicada - ago. 1997
Publicado de forma externa	Sí

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title = "Two sources of excitation of photoluminescence of porous silicon",

abstract = "The change occurring in the photoluminescence spectra and the photoluminescence excitation spectra during aging of porous-silicon samples in air and in vacuum has been investigated. It was found that the character of the photoluminescence changes occurring during aging depends on the wavelength of the exciting light: In the case of excitation in the visible-range band of the luminescence excitation spectrum (λexc> 490 nm) the photoluminescence decreases and in the case of excitation in the ultraviolet band it predominantly increases. It is shown that the two bands of the luminescence excitation spectrum (visible and ultraviolet) correspond to two different objects on the surface of the porous layer.",

author = "Korsunskaya, {N. E.} and Torchinskaya, {T. V.} and Dzhumaev, {B. R.} and Khomenkova, {L. Yu} and Bulakh, {B. M.}",

year = "1997",

month = aug,

doi = "10.1134/1.1187246",

language = "Ingl{\'e}s",

volume = "31",

pages = "773--776",

journal = "Semiconductors",

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T1 - Two sources of excitation of photoluminescence of porous silicon

AU - Korsunskaya, N. E.

AU - Torchinskaya, T. V.

AU - Dzhumaev, B. R.

AU - Khomenkova, L. Yu

AU - Bulakh, B. M.

PY - 1997/8

Y1 - 1997/8

N2 - The change occurring in the photoluminescence spectra and the photoluminescence excitation spectra during aging of porous-silicon samples in air and in vacuum has been investigated. It was found that the character of the photoluminescence changes occurring during aging depends on the wavelength of the exciting light: In the case of excitation in the visible-range band of the luminescence excitation spectrum (λexc> 490 nm) the photoluminescence decreases and in the case of excitation in the ultraviolet band it predominantly increases. It is shown that the two bands of the luminescence excitation spectrum (visible and ultraviolet) correspond to two different objects on the surface of the porous layer.

AB - The change occurring in the photoluminescence spectra and the photoluminescence excitation spectra during aging of porous-silicon samples in air and in vacuum has been investigated. It was found that the character of the photoluminescence changes occurring during aging depends on the wavelength of the exciting light: In the case of excitation in the visible-range band of the luminescence excitation spectrum (λexc> 490 nm) the photoluminescence decreases and in the case of excitation in the ultraviolet band it predominantly increases. It is shown that the two bands of the luminescence excitation spectrum (visible and ultraviolet) correspond to two different objects on the surface of the porous layer.

UR - http://www.scopus.com/inward/record.url?scp=0008790905&partnerID=8YFLogxK

U2 - 10.1134/1.1187246

DO - 10.1134/1.1187246

M3 - Artículo

SN - 1063-7826

VL - 31

SP - 773

EP - 776

JO - Semiconductors

JF - Semiconductors

IS - 8

ER -

Two sources of excitation of photoluminescence of porous silicon

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