Two sources of excitation of photoluminescence of porous silicon

N. E. Korsunskaya; T. V. Torchinskaya; B. R. Dzhumaev; L. Yu Khomenkova; B. M. Bulakh

doi:10.1134/1.1187246

Two sources of excitation of photoluminescence of porous silicon

N. E. Korsunskaya, T. V. Torchinskaya, B. R. Dzhumaev, L. Yu Khomenkova, B. M. Bulakh

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The change occurring in the photoluminescence spectra and the photoluminescence excitation spectra during aging of porous-silicon samples in air and in vacuum has been investigated. It was found that the character of the photoluminescence changes occurring during aging depends on the wavelength of the exciting light: In the case of excitation in the visible-range band of the luminescence excitation spectrum (λ_exc> 490 nm) the photoluminescence decreases and in the case of excitation in the ultraviolet band it predominantly increases. It is shown that the two bands of the luminescence excitation spectrum (visible and ultraviolet) correspond to two different objects on the surface of the porous layer.

Original language	English
Pages (from-to)	773-776
Number of pages	4
Journal	Semiconductors
Volume	31
Issue number	8
DOIs	https://doi.org/10.1134/1.1187246
State	Published - Aug 1997
Externally published	Yes

Access to Document

10.1134/1.1187246

Cite this

@article{9455eeb0f4d24c5c90dca986d76cbac2,

title = "Two sources of excitation of photoluminescence of porous silicon",

abstract = "The change occurring in the photoluminescence spectra and the photoluminescence excitation spectra during aging of porous-silicon samples in air and in vacuum has been investigated. It was found that the character of the photoluminescence changes occurring during aging depends on the wavelength of the exciting light: In the case of excitation in the visible-range band of the luminescence excitation spectrum (λexc> 490 nm) the photoluminescence decreases and in the case of excitation in the ultraviolet band it predominantly increases. It is shown that the two bands of the luminescence excitation spectrum (visible and ultraviolet) correspond to two different objects on the surface of the porous layer.",

author = "Korsunskaya, {N. E.} and Torchinskaya, {T. V.} and Dzhumaev, {B. R.} and Khomenkova, {L. Yu} and Bulakh, {B. M.}",

year = "1997",

month = aug,

doi = "10.1134/1.1187246",

language = "Ingl{\'e}s",

volume = "31",

pages = "773--776",

journal = "Semiconductors",

issn = "1063-7826",

number = "8",

}

TY - JOUR

T1 - Two sources of excitation of photoluminescence of porous silicon

AU - Korsunskaya, N. E.

AU - Torchinskaya, T. V.

AU - Dzhumaev, B. R.

AU - Khomenkova, L. Yu

AU - Bulakh, B. M.

PY - 1997/8

Y1 - 1997/8

N2 - The change occurring in the photoluminescence spectra and the photoluminescence excitation spectra during aging of porous-silicon samples in air and in vacuum has been investigated. It was found that the character of the photoluminescence changes occurring during aging depends on the wavelength of the exciting light: In the case of excitation in the visible-range band of the luminescence excitation spectrum (λexc> 490 nm) the photoluminescence decreases and in the case of excitation in the ultraviolet band it predominantly increases. It is shown that the two bands of the luminescence excitation spectrum (visible and ultraviolet) correspond to two different objects on the surface of the porous layer.

AB - The change occurring in the photoluminescence spectra and the photoluminescence excitation spectra during aging of porous-silicon samples in air and in vacuum has been investigated. It was found that the character of the photoluminescence changes occurring during aging depends on the wavelength of the exciting light: In the case of excitation in the visible-range band of the luminescence excitation spectrum (λexc> 490 nm) the photoluminescence decreases and in the case of excitation in the ultraviolet band it predominantly increases. It is shown that the two bands of the luminescence excitation spectrum (visible and ultraviolet) correspond to two different objects on the surface of the porous layer.

UR - http://www.scopus.com/inward/record.url?scp=0008790905&partnerID=8YFLogxK

U2 - 10.1134/1.1187246

DO - 10.1134/1.1187246

M3 - Artículo

SN - 1063-7826

VL - 31

SP - 773

EP - 776

JO - Semiconductors

JF - Semiconductors

IS - 8

ER -

Two sources of excitation of photoluminescence of porous silicon

Abstract

Access to Document

Other files and links

Fingerprint

Cite this