Tunneling electroresistance effect in a Pt/Hf0.5Zr0.5O2/Pt structure

F. Ambriz-Vargas; G. Kolhatkar; R. Thomas; R. Nouar; A. Sarkissian; C. Gomez-Yáñez; M. A. Gauthier; A. Ruediger

doi:10.1063/1.4977028

Tunneling electroresistance effect in a Pt/Hf_0.5Zr_0.5O₂/Pt structure

F. Ambriz-Vargas, G. Kolhatkar, R. Thomas, R. Nouar, A. Sarkissian, C. Gomez-Yáñez, M. A. Gauthier, A. Ruediger

Escuela Superior de Ingeniería Química e Industrias Extractivas (ESIQIE)

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

108 Citas (Scopus)

Resumen

The present work reports the fabrication of a ferroelectric tunnel junction based on a CMOS compatible 2.8 nm-thick Hf_0.5Zr_0.5O₂ tunnel barrier. It presents a comprehensive study of the electronic properties of the Pt/Hf_0.5Zr_0.5O₂/Pt system by X-ray photoelectron and UV-Visible spectroscopies. Furthermore, two different scanning probe techniques (Piezoresponse Force Microscopy and conductive-AFM) were used to demonstrate the ferroelectric behavior of the ultrathin Hf_0.5Zr_0.5O₂ layer as well as the typical current-voltage characteristic of a ferroelectric tunnel junction device. Finally, a direct tunneling model across symmetric barriers was used to correlate electronic and electric transport properties of the ferroelectric tunnel junction system, demonstrating a large tunnel electroresistance effect with a tunneling electroresistance effect ratio of 20.

Idioma original	Inglés
Número de artículo	093106
Publicación	Applied Physics Letters
Volumen	110
N.º	9
DOI	https://doi.org/10.1063/1.4977028
Estado	Publicada - 27 feb. 2017

Acceder al documento

10.1063/1.4977028

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

@article{0e45284eae9443168b0ce04fc421cce4,

title = "Tunneling electroresistance effect in a Pt/Hf0.5Zr0.5O2/Pt structure",

abstract = "The present work reports the fabrication of a ferroelectric tunnel junction based on a CMOS compatible 2.8 nm-thick Hf0.5Zr0.5O2 tunnel barrier. It presents a comprehensive study of the electronic properties of the Pt/Hf0.5Zr0.5O2/Pt system by X-ray photoelectron and UV-Visible spectroscopies. Furthermore, two different scanning probe techniques (Piezoresponse Force Microscopy and conductive-AFM) were used to demonstrate the ferroelectric behavior of the ultrathin Hf0.5Zr0.5O2 layer as well as the typical current-voltage characteristic of a ferroelectric tunnel junction device. Finally, a direct tunneling model across symmetric barriers was used to correlate electronic and electric transport properties of the ferroelectric tunnel junction system, demonstrating a large tunnel electroresistance effect with a tunneling electroresistance effect ratio of 20.",

author = "F. Ambriz-Vargas and G. Kolhatkar and R. Thomas and R. Nouar and A. Sarkissian and C. Gomez-Y{\'a}{\~n}ez and Gauthier, {M. A.} and A. Ruediger",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = feb,

day = "27",

doi = "10.1063/1.4977028",

language = "Ingl{\'e}s",

volume = "110",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "9",

}

TY - JOUR

T1 - Tunneling electroresistance effect in a Pt/Hf0.5Zr0.5O2/Pt structure

AU - Ambriz-Vargas, F.

AU - Kolhatkar, G.

AU - Thomas, R.

AU - Nouar, R.

AU - Sarkissian, A.

AU - Gomez-Yáñez, C.

AU - Gauthier, M. A.

AU - Ruediger, A.

PY - 2017/2/27

Y1 - 2017/2/27

N2 - The present work reports the fabrication of a ferroelectric tunnel junction based on a CMOS compatible 2.8 nm-thick Hf0.5Zr0.5O2 tunnel barrier. It presents a comprehensive study of the electronic properties of the Pt/Hf0.5Zr0.5O2/Pt system by X-ray photoelectron and UV-Visible spectroscopies. Furthermore, two different scanning probe techniques (Piezoresponse Force Microscopy and conductive-AFM) were used to demonstrate the ferroelectric behavior of the ultrathin Hf0.5Zr0.5O2 layer as well as the typical current-voltage characteristic of a ferroelectric tunnel junction device. Finally, a direct tunneling model across symmetric barriers was used to correlate electronic and electric transport properties of the ferroelectric tunnel junction system, demonstrating a large tunnel electroresistance effect with a tunneling electroresistance effect ratio of 20.

AB - The present work reports the fabrication of a ferroelectric tunnel junction based on a CMOS compatible 2.8 nm-thick Hf0.5Zr0.5O2 tunnel barrier. It presents a comprehensive study of the electronic properties of the Pt/Hf0.5Zr0.5O2/Pt system by X-ray photoelectron and UV-Visible spectroscopies. Furthermore, two different scanning probe techniques (Piezoresponse Force Microscopy and conductive-AFM) were used to demonstrate the ferroelectric behavior of the ultrathin Hf0.5Zr0.5O2 layer as well as the typical current-voltage characteristic of a ferroelectric tunnel junction device. Finally, a direct tunneling model across symmetric barriers was used to correlate electronic and electric transport properties of the ferroelectric tunnel junction system, demonstrating a large tunnel electroresistance effect with a tunneling electroresistance effect ratio of 20.

UR - http://www.scopus.com/inward/record.url?scp=85014499552&partnerID=8YFLogxK

U2 - 10.1063/1.4977028

DO - 10.1063/1.4977028

M3 - Artículo

SN - 0003-6951

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 093106

ER -