Tunneling electroresistance effect in a Pt/Hf0.5Zr0.5O2/Pt structure

F. Ambriz-Vargas; G. Kolhatkar; R. Thomas; R. Nouar; A. Sarkissian; C. Gomez-Yáñez; M. A. Gauthier; A. Ruediger

doi:10.1063/1.4977028

Tunneling electroresistance effect in a Pt/Hf_0.5Zr_0.5O₂/Pt structure

F. Ambriz-Vargas, G. Kolhatkar, R. Thomas, R. Nouar, A. Sarkissian, C. Gomez-Yáñez, M. A. Gauthier, A. Ruediger

Escuela Superior de Ingeniería Química e Industrias Extractivas (ESIQIE)

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108 Scopus citations

Abstract

The present work reports the fabrication of a ferroelectric tunnel junction based on a CMOS compatible 2.8 nm-thick Hf_0.5Zr_0.5O₂ tunnel barrier. It presents a comprehensive study of the electronic properties of the Pt/Hf_0.5Zr_0.5O₂/Pt system by X-ray photoelectron and UV-Visible spectroscopies. Furthermore, two different scanning probe techniques (Piezoresponse Force Microscopy and conductive-AFM) were used to demonstrate the ferroelectric behavior of the ultrathin Hf_0.5Zr_0.5O₂ layer as well as the typical current-voltage characteristic of a ferroelectric tunnel junction device. Finally, a direct tunneling model across symmetric barriers was used to correlate electronic and electric transport properties of the ferroelectric tunnel junction system, demonstrating a large tunnel electroresistance effect with a tunneling electroresistance effect ratio of 20.

Original language	English
Article number	093106
Journal	Applied Physics Letters
Volume	110
Issue number	9
DOIs	https://doi.org/10.1063/1.4977028
State	Published - 27 Feb 2017

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title = "Tunneling electroresistance effect in a Pt/Hf0.5Zr0.5O2/Pt structure",

abstract = "The present work reports the fabrication of a ferroelectric tunnel junction based on a CMOS compatible 2.8 nm-thick Hf0.5Zr0.5O2 tunnel barrier. It presents a comprehensive study of the electronic properties of the Pt/Hf0.5Zr0.5O2/Pt system by X-ray photoelectron and UV-Visible spectroscopies. Furthermore, two different scanning probe techniques (Piezoresponse Force Microscopy and conductive-AFM) were used to demonstrate the ferroelectric behavior of the ultrathin Hf0.5Zr0.5O2 layer as well as the typical current-voltage characteristic of a ferroelectric tunnel junction device. Finally, a direct tunneling model across symmetric barriers was used to correlate electronic and electric transport properties of the ferroelectric tunnel junction system, demonstrating a large tunnel electroresistance effect with a tunneling electroresistance effect ratio of 20.",

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T1 - Tunneling electroresistance effect in a Pt/Hf0.5Zr0.5O2/Pt structure

AU - Ambriz-Vargas, F.

AU - Kolhatkar, G.

AU - Thomas, R.

AU - Nouar, R.

AU - Sarkissian, A.

AU - Gomez-Yáñez, C.

AU - Gauthier, M. A.

AU - Ruediger, A.

PY - 2017/2/27

Y1 - 2017/2/27

N2 - The present work reports the fabrication of a ferroelectric tunnel junction based on a CMOS compatible 2.8 nm-thick Hf0.5Zr0.5O2 tunnel barrier. It presents a comprehensive study of the electronic properties of the Pt/Hf0.5Zr0.5O2/Pt system by X-ray photoelectron and UV-Visible spectroscopies. Furthermore, two different scanning probe techniques (Piezoresponse Force Microscopy and conductive-AFM) were used to demonstrate the ferroelectric behavior of the ultrathin Hf0.5Zr0.5O2 layer as well as the typical current-voltage characteristic of a ferroelectric tunnel junction device. Finally, a direct tunneling model across symmetric barriers was used to correlate electronic and electric transport properties of the ferroelectric tunnel junction system, demonstrating a large tunnel electroresistance effect with a tunneling electroresistance effect ratio of 20.

AB - The present work reports the fabrication of a ferroelectric tunnel junction based on a CMOS compatible 2.8 nm-thick Hf0.5Zr0.5O2 tunnel barrier. It presents a comprehensive study of the electronic properties of the Pt/Hf0.5Zr0.5O2/Pt system by X-ray photoelectron and UV-Visible spectroscopies. Furthermore, two different scanning probe techniques (Piezoresponse Force Microscopy and conductive-AFM) were used to demonstrate the ferroelectric behavior of the ultrathin Hf0.5Zr0.5O2 layer as well as the typical current-voltage characteristic of a ferroelectric tunnel junction device. Finally, a direct tunneling model across symmetric barriers was used to correlate electronic and electric transport properties of the ferroelectric tunnel junction system, demonstrating a large tunnel electroresistance effect with a tunneling electroresistance effect ratio of 20.

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Tunneling electroresistance effect in a Pt/Hf_0.5Zr_0.5O₂/Pt structure

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