Transformation of excitonic and DA luminescence spectra of GaP:N light-emitting structures on the introduction of dislocations

The transformation of excitonic and donor-acceptor luminescence spectra of p⁺⁺ layers of GaP:N light-emitting structures at the creation of dislocations has been studied. The appearance of dislocations is shown to be associated with a high level of p⁺⁺ layer doping. The presence of dislocations brings about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their phononic replicas, and also the appearance of a new 2.149 eV luminescence band.