Transformation of excitonic and DA luminescence spectra of GaP:N light-emitting structures on the introduction of dislocations

T. V. Torchinskaya; N. E. Korsunskaya; M. K. Sheinkman

doi:10.1088/0268-1242/7/3/019

Transformation of excitonic and DA luminescence spectra of GaP:N light-emitting structures on the introduction of dislocations

T. V. Torchinskaya, N. E. Korsunskaya, M. K. Sheinkman

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Abstract

The transformation of excitonic and donor-acceptor luminescence spectra of p⁺⁺ layers of GaP:N light-emitting structures at the creation of dislocations has been studied. The appearance of dislocations is shown to be associated with a high level of p⁺⁺ layer doping. The presence of dislocations brings about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their phononic replicas, and also the appearance of a new 2.149 eV luminescence band.

Original language	English
Article number	019
Pages (from-to)	385-390
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	7
Issue number	3
DOIs	https://doi.org/10.1088/0268-1242/7/3/019
State	Published - 1992
Externally published	Yes

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title = "Transformation of excitonic and DA luminescence spectra of GaP:N light-emitting structures on the introduction of dislocations",

abstract = "The transformation of excitonic and donor-acceptor luminescence spectra of p++ layers of GaP:N light-emitting structures at the creation of dislocations has been studied. The appearance of dislocations is shown to be associated with a high level of p++ layer doping. The presence of dislocations brings about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their phononic replicas, and also the appearance of a new 2.149 eV luminescence band.",

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year = "1992",

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AU - Torchinskaya, T. V.

AU - Korsunskaya, N. E.

AU - Sheinkman, M. K.

PY - 1992

Y1 - 1992

N2 - The transformation of excitonic and donor-acceptor luminescence spectra of p++ layers of GaP:N light-emitting structures at the creation of dislocations has been studied. The appearance of dislocations is shown to be associated with a high level of p++ layer doping. The presence of dislocations brings about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their phononic replicas, and also the appearance of a new 2.149 eV luminescence band.

AB - The transformation of excitonic and donor-acceptor luminescence spectra of p++ layers of GaP:N light-emitting structures at the creation of dislocations has been studied. The appearance of dislocations is shown to be associated with a high level of p++ layer doping. The presence of dislocations brings about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their phononic replicas, and also the appearance of a new 2.149 eV luminescence band.

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U2 - 10.1088/0268-1242/7/3/019

DO - 10.1088/0268-1242/7/3/019

M3 - Artículo

SN - 0268-1242

VL - 7

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EP - 390

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 3

M1 - 019

ER -

Transformation of excitonic and DA luminescence spectra of GaP:N light-emitting structures on the introduction of dislocations

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