Thermal activation of excitons in asymmetric InAs dots-in-a-well In xGa1-xAs/GaAs structures

T. V. Torchynska; J. L. Casas Espinola; L. V. Borkovska; S. Ostapenko; M. Dybiec; O. Polupan; N. O. Korsunska; A. Stintz; P. G. Eliseev; K. J. Malloy

doi:10.1063/1.2427105

Thermal activation of excitons in asymmetric InAs dots-in-a-well In _xGa_1-xAs/GaAs structures

T. V. Torchynska, J. L. Casas Espinola, L. V. Borkovska, S. Ostapenko, M. Dybiec, O. Polupan, N. O. Korsunska, A. Stintz, P. G. Eliseev, K. J. Malloy

Escuela Superior de Física y Matemáticas (ESFM)

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95 Citas (Scopus)

Resumen

Photoluminescence, its temperature dependence, and photoluminescence excitation spectra of InAs quantum dots embedded in asymmetric Inx Ga1-x AsGaAs quantum wells [dots in a well (DWELL)] have been investigated as a function of the indium content x (x=0.10-0.25) in the capping Inx Ga1-x As layer. The asymmetric DWELL structures were created with the aim to investigate the influence of different barrier values at the quantum dot (QD)/quantum well interface on the photoluminescence thermal quenching process. The set of rate equations for the two stage model for the capture and thermal escape of excitons in QDs are solved to analyze the nature of thermal activation energies for the QD photoluminescence quenching process. The two stage model for exciton thermal activation was confirmed experimentally in the investigated QD structures as well. The localization of nonradiative defects in InAsInGaAs DWELL structures is discussed on the base of comparison of theoretical and numerically calculated (fitting) results.

Idioma original	Inglés
Número de artículo	024323
Publicación	Journal of Applied Physics
Volumen	101
N.º	2
DOI	https://doi.org/10.1063/1.2427105
Estado	Publicada - 2007

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@article{3e50216c1dce4e5c9515de68a19b367b,

title = "Thermal activation of excitons in asymmetric InAs dots-in-a-well In xGa1-xAs/GaAs structures",

abstract = "Photoluminescence, its temperature dependence, and photoluminescence excitation spectra of InAs quantum dots embedded in asymmetric Inx Ga1-x AsGaAs quantum wells [dots in a well (DWELL)] have been investigated as a function of the indium content x (x=0.10-0.25) in the capping Inx Ga1-x As layer. The asymmetric DWELL structures were created with the aim to investigate the influence of different barrier values at the quantum dot (QD)/quantum well interface on the photoluminescence thermal quenching process. The set of rate equations for the two stage model for the capture and thermal escape of excitons in QDs are solved to analyze the nature of thermal activation energies for the QD photoluminescence quenching process. The two stage model for exciton thermal activation was confirmed experimentally in the investigated QD structures as well. The localization of nonradiative defects in InAsInGaAs DWELL structures is discussed on the base of comparison of theoretical and numerically calculated (fitting) results.",

author = "Torchynska, {T. V.} and {Casas Espinola}, {J. L.} and Borkovska, {L. V.} and S. Ostapenko and M. Dybiec and O. Polupan and Korsunska, {N. O.} and A. Stintz and Eliseev, {P. G.} and Malloy, {K. J.}",

note = "Funding Information: The work was partially supported by the National Science Foundation, USA (Award No. DMI-0523163) and SIP-IPN as well as by Mexico-USA international cooperation project between the National Polytechnic Institute of Mexico and Center of High Technology Materials (CHTM) at the University of New Mexico, Albuquerque, USA. One of the authors (L.V.B.) is a visiting scientist.",

year = "2007",

doi = "10.1063/1.2427105",

language = "Ingl{\'e}s",

volume = "101",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "2",

}

TY - JOUR

T1 - Thermal activation of excitons in asymmetric InAs dots-in-a-well In xGa1-xAs/GaAs structures

AU - Torchynska, T. V.

AU - Casas Espinola, J. L.

AU - Borkovska, L. V.

AU - Ostapenko, S.

AU - Dybiec, M.

AU - Polupan, O.

AU - Korsunska, N. O.

AU - Stintz, A.

AU - Eliseev, P. G.

AU - Malloy, K. J.

N1 - Funding Information: The work was partially supported by the National Science Foundation, USA (Award No. DMI-0523163) and SIP-IPN as well as by Mexico-USA international cooperation project between the National Polytechnic Institute of Mexico and Center of High Technology Materials (CHTM) at the University of New Mexico, Albuquerque, USA. One of the authors (L.V.B.) is a visiting scientist.

PY - 2007

Y1 - 2007

N2 - Photoluminescence, its temperature dependence, and photoluminescence excitation spectra of InAs quantum dots embedded in asymmetric Inx Ga1-x AsGaAs quantum wells [dots in a well (DWELL)] have been investigated as a function of the indium content x (x=0.10-0.25) in the capping Inx Ga1-x As layer. The asymmetric DWELL structures were created with the aim to investigate the influence of different barrier values at the quantum dot (QD)/quantum well interface on the photoluminescence thermal quenching process. The set of rate equations for the two stage model for the capture and thermal escape of excitons in QDs are solved to analyze the nature of thermal activation energies for the QD photoluminescence quenching process. The two stage model for exciton thermal activation was confirmed experimentally in the investigated QD structures as well. The localization of nonradiative defects in InAsInGaAs DWELL structures is discussed on the base of comparison of theoretical and numerically calculated (fitting) results.

AB - Photoluminescence, its temperature dependence, and photoluminescence excitation spectra of InAs quantum dots embedded in asymmetric Inx Ga1-x AsGaAs quantum wells [dots in a well (DWELL)] have been investigated as a function of the indium content x (x=0.10-0.25) in the capping Inx Ga1-x As layer. The asymmetric DWELL structures were created with the aim to investigate the influence of different barrier values at the quantum dot (QD)/quantum well interface on the photoluminescence thermal quenching process. The set of rate equations for the two stage model for the capture and thermal escape of excitons in QDs are solved to analyze the nature of thermal activation energies for the QD photoluminescence quenching process. The two stage model for exciton thermal activation was confirmed experimentally in the investigated QD structures as well. The localization of nonradiative defects in InAsInGaAs DWELL structures is discussed on the base of comparison of theoretical and numerically calculated (fitting) results.

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U2 - 10.1063/1.2427105

DO - 10.1063/1.2427105

M3 - Artículo

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VL - 101

JO - Journal of Applied Physics

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