@inproceedings{6770a43a615041bd87286e95f1380cb2,
title = "The effect of Si-substrate on the optical characterization of Ge nanostructures obtained by LPCVD",
abstract = "Germanium nanostructures (Ge-ns) were grown by Low Pressure Chemical Vapor Deposition on a SiO2 film. Samples were studied by micro-Raman spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). We report the analysis of the influence of the silicon substrate on the Raman scattering spectra of the Ge-ns. Both the broadening and the small shift observed in the Raman peak can be attributed to the variation in the size distribution of the Ge-ns and the phonon confinement. AFM images show a Ge-ns density around 4×1010 cm-2, with a 20 nm mean size and 6 nm height. AFM and SEM images revealed an excellent agreement which could be used to estimate the size and size distribution of the nanostructures. Finally, the Raman spectra were fitted with a theoretical model to evaluate the average size and full-width at half-maximum.",
author = "Mestanza, {S. N.M.} and E. Rodriguez and I. Doi and Vaz, {A. R.} and Frateschi, {N. C.}",
year = "2007",
doi = "10.1149/1.2766883",
language = "Ingl{\'e}s",
isbn = "9781566775656",
series = "ECS Transactions",
number = "1",
pages = "143--149",
booktitle = "ECS Transactions - 22nd Symposium on Microelectronics Technology and Devices, SBMicro2007",
edition = "1",
note = "22nd Symposium on Microelectronics Technology and Devices, SBMicro2007 ; Conference date: 03-09-2007 Through 06-09-2007",
}