Surface Review and Letters

J. Díaz-Reyes; E. Corona-Organiche; J. L. Herrera-Pérez; O. Zarate-Corona; J. Mendoza-Alvarez

Surface Review and Letters

J. Díaz-Reyes, E. Corona-Organiche, J. L. Herrera-Pérez, O. Zarate-Corona, J. Mendoza-Alvarez

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Resumen

Tellurium-doped GaInArSb epitaxial layers with electron concentration in the range of 3 × 10 17 2 × 10 20 cm -3 are grown at 530°C on (100) GaSb substares by liquid phase epitaxy (LPE). To dope the layers we used pellets of Sb 3 Te 2 in preparing growth melts. The low temperature photoluminescence (PL) spectra (20 K) showed a dominant peak composed of three transitions associated to excitons bound to residual acceptor impurities. For highly Te-doped layers the excitonic transitions related to exciton bound to neutral acceptor, BE 2 , disappears.

Idioma original	Inglés estadounidense
Páginas	1645-1649
Número de páginas	5
Estado	Publicada - 1 oct. 2002
Publicado de forma externa	Sí
Evento	conference - Duración: 1 oct. 2002 → …

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Conferencia	conference
Período	1/10/02 → …

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@conference{98a6d18d79884e2ebffa361ae2d25041,

title = "Surface Review and Letters",

abstract = "Tellurium-doped GaInArSb epitaxial layers with electron concentration in the range of 3 × 10 17 2 × 10 20 cm -3 are grown at 530°C on (100) GaSb substares by liquid phase epitaxy (LPE). To dope the layers we used pellets of Sb 3 Te 2 in preparing growth melts. The low temperature photoluminescence (PL) spectra (20 K) showed a dominant peak composed of three transitions associated to excitons bound to residual acceptor impurities. For highly Te-doped layers the excitonic transitions related to exciton bound to neutral acceptor, BE 2 , disappears.",

author = "J. D{\'i}az-Reyes and E. Corona-Organiche and Herrera-P{\'e}rez, {J. L.} and O. Zarate-Corona and J. Mendoza-Alvarez",

year = "2002",

month = oct,

day = "1",

language = "American English",

pages = "1645--1649",

note = "conference ; Conference date: 01-10-2002",

}

TY - CONF

T1 - Surface Review and Letters

AU - Díaz-Reyes, J.

AU - Corona-Organiche, E.

AU - Herrera-Pérez, J. L.

AU - Zarate-Corona, O.

AU - Mendoza-Alvarez, J.

PY - 2002/10/1

Y1 - 2002/10/1

N2 - Tellurium-doped GaInArSb epitaxial layers with electron concentration in the range of 3 × 10 17 2 × 10 20 cm -3 are grown at 530°C on (100) GaSb substares by liquid phase epitaxy (LPE). To dope the layers we used pellets of Sb 3 Te 2 in preparing growth melts. The low temperature photoluminescence (PL) spectra (20 K) showed a dominant peak composed of three transitions associated to excitons bound to residual acceptor impurities. For highly Te-doped layers the excitonic transitions related to exciton bound to neutral acceptor, BE 2 , disappears.

AB - Tellurium-doped GaInArSb epitaxial layers with electron concentration in the range of 3 × 10 17 2 × 10 20 cm -3 are grown at 530°C on (100) GaSb substares by liquid phase epitaxy (LPE). To dope the layers we used pellets of Sb 3 Te 2 in preparing growth melts. The low temperature photoluminescence (PL) spectra (20 K) showed a dominant peak composed of three transitions associated to excitons bound to residual acceptor impurities. For highly Te-doped layers the excitonic transitions related to exciton bound to neutral acceptor, BE 2 , disappears.

M3 - Paper

SP - 1645

EP - 1649

T2 - conference

Y2 - 1 October 2002

ER -

Surface Review and Letters

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