Abstract
Tellurium-doped GaInArSb epitaxial layers with electron concentration in the range of 3 × 10 17 2 × 10 20 cm -3 are grown at 530°C on (100) GaSb substares by liquid phase epitaxy (LPE). To dope the layers we used pellets of Sb 3 Te 2 in preparing growth melts. The low temperature photoluminescence (PL) spectra (20 K) showed a dominant peak composed of three transitions associated to excitons bound to residual acceptor impurities. For highly Te-doped layers the excitonic transitions related to exciton bound to neutral acceptor, BE 2 , disappears.
Original language | American English |
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Pages | 1645-1649 |
Number of pages | 5 |
State | Published - 1 Oct 2002 |
Externally published | Yes |
Event | conference - Duration: 1 Oct 2002 → … |
Conference
Conference | conference |
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Period | 1/10/02 → … |