Study of the superconducting MgB2 films by ion beam analysis methods

E. Andrade; Š Chromik; Mi Jergel; Ma Jergel; C. Falcony; V. Štrbík; M. F. Rocha; E. P. Zavala

doi:10.1016/S0040-6090(03)00322-5

Study of the superconducting MgB₂ films by ion beam analysis methods

E. Andrade, Š Chromik, Mi Jergel, Ma Jergel, C. Falcony, V. Štrbík, M. F. Rocha, E. P. Zavala

Escuela Superior de Ingeniería Mecánica y Eléctrica (ESIME), Unidad Zacatenco

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

4 Citas (Scopus)

Resumen

Superconducting MgB₂ films were prepared by sequential e-beam evaporation of boron and magnesium on randomly oriented sapphire, glassy carbon and silicon substrates followed by an in-situ annealing. Ion beam analysis (IBA) methods using a 2530 keV ³He⁺ beam were applied to obtain the Mg and B film profiles by Rutherford backscattering (RBS) and nuclear reaction analysis (NRA). It was found that Mg and B diffuse rather deeply into the substrates due to the annealing process. A presence of O and C in the MgB₂ films was detected, apparently as formation of MgO and eventually B₂O₃. The zero resistance critical temperatures T_co values were 28 K for MgB₂/Al₂O₃ and 25 K for MgB₂ /C samples. Because of a rather high annealing temperature of 700 °C, we obtained T_co=8 K only in the case of MgB₂/Si(111) sample.

Idioma original	Inglés
Páginas (desde-hasta)	103-107
Número de páginas	5
Publicación	Thin Solid Films
Volumen	433
N.º	1-2 SPEC.
DOI	https://doi.org/10.1016/S0040-6090(03)00322-5
Estado	Publicada - 2 jun. 2003

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title = "Study of the superconducting MgB2 films by ion beam analysis methods",

abstract = "Superconducting MgB2 films were prepared by sequential e-beam evaporation of boron and magnesium on randomly oriented sapphire, glassy carbon and silicon substrates followed by an in-situ annealing. Ion beam analysis (IBA) methods using a 2530 keV 3He+ beam were applied to obtain the Mg and B film profiles by Rutherford backscattering (RBS) and nuclear reaction analysis (NRA). It was found that Mg and B diffuse rather deeply into the substrates due to the annealing process. A presence of O and C in the MgB2 films was detected, apparently as formation of MgO and eventually B2O3. The zero resistance critical temperatures Tco values were 28 K for MgB2/Al2O3 and 25 K for MgB2 /C samples. Because of a rather high annealing temperature of 700 °C, we obtained Tco=8 K only in the case of MgB2/Si(111) sample.",

keywords = "Ion beam analysis, MgB superconducting films, Nuclear reaction analysis, Rutherford backscattering",

author = "E. Andrade and {\v S} Chromik and Mi Jergel and Ma Jergel and C. Falcony and V. {\v S}trb{\'i}k and Rocha, {M. F.} and Zavala, {E. P.}",

note = "Funding Information: This work was partially supported by DGAPA-UNAM under project IN103502 and also by the International Atomic Energy Agency under the research contract No. 11365/R1 and by the Slovak Grant Agency VEGA under the projects No. 2/2068/22 and 2/7199/20. The technical assistance of E.P. Zavala is also appreciated. ",

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T1 - Study of the superconducting MgB2 films by ion beam analysis methods

AU - Andrade, E.

AU - Chromik, Š

AU - Jergel, Mi

AU - Jergel, Ma

AU - Falcony, C.

AU - Štrbík, V.

AU - Rocha, M. F.

AU - Zavala, E. P.

N1 - Funding Information: This work was partially supported by DGAPA-UNAM under project IN103502 and also by the International Atomic Energy Agency under the research contract No. 11365/R1 and by the Slovak Grant Agency VEGA under the projects No. 2/2068/22 and 2/7199/20. The technical assistance of E.P. Zavala is also appreciated.

PY - 2003/6/2

Y1 - 2003/6/2

N2 - Superconducting MgB2 films were prepared by sequential e-beam evaporation of boron and magnesium on randomly oriented sapphire, glassy carbon and silicon substrates followed by an in-situ annealing. Ion beam analysis (IBA) methods using a 2530 keV 3He+ beam were applied to obtain the Mg and B film profiles by Rutherford backscattering (RBS) and nuclear reaction analysis (NRA). It was found that Mg and B diffuse rather deeply into the substrates due to the annealing process. A presence of O and C in the MgB2 films was detected, apparently as formation of MgO and eventually B2O3. The zero resistance critical temperatures Tco values were 28 K for MgB2/Al2O3 and 25 K for MgB2 /C samples. Because of a rather high annealing temperature of 700 °C, we obtained Tco=8 K only in the case of MgB2/Si(111) sample.

AB - Superconducting MgB2 films were prepared by sequential e-beam evaporation of boron and magnesium on randomly oriented sapphire, glassy carbon and silicon substrates followed by an in-situ annealing. Ion beam analysis (IBA) methods using a 2530 keV 3He+ beam were applied to obtain the Mg and B film profiles by Rutherford backscattering (RBS) and nuclear reaction analysis (NRA). It was found that Mg and B diffuse rather deeply into the substrates due to the annealing process. A presence of O and C in the MgB2 films was detected, apparently as formation of MgO and eventually B2O3. The zero resistance critical temperatures Tco values were 28 K for MgB2/Al2O3 and 25 K for MgB2 /C samples. Because of a rather high annealing temperature of 700 °C, we obtained Tco=8 K only in the case of MgB2/Si(111) sample.

KW - Ion beam analysis

KW - MgB superconducting films

KW - Nuclear reaction analysis

KW - Rutherford backscattering

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