Abstract
Superconducting MgB2 films were prepared by sequential e-beam evaporation of boron and magnesium on randomly oriented sapphire, glassy carbon and silicon substrates followed by an in-situ annealing. Ion beam analysis (IBA) methods using a 2530 keV 3He+ beam were applied to obtain the Mg and B film profiles by Rutherford backscattering (RBS) and nuclear reaction analysis (NRA). It was found that Mg and B diffuse rather deeply into the substrates due to the annealing process. A presence of O and C in the MgB2 films was detected, apparently as formation of MgO and eventually B2O3. The zero resistance critical temperatures Tco values were 28 K for MgB2/Al2O3 and 25 K for MgB2 /C samples. Because of a rather high annealing temperature of 700 °C, we obtained Tco=8 K only in the case of MgB2/Si(111) sample.
Original language | English |
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Pages (from-to) | 103-107 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 433 |
Issue number | 1-2 SPEC. |
DOIs | |
State | Published - 2 Jun 2003 |
Keywords
- Ion beam analysis
- MgB superconducting films
- Nuclear reaction analysis
- Rutherford backscattering