TY - JOUR
T1 - Structural, electric and kinetic parameters of ternary alloys of GeSbTe
AU - Morales-Sánchez, E.
AU - Prokhorov, E. F.
AU - González-Hernández, J.
AU - Mendoza-Galván, A.
PY - 2005/1/3
Y1 - 2005/1/3
N2 - Thin amorphous films of GeSbTe have been widely employed in the technology used for phase change optical memory or compact disks. In this article, we report on measurements of resistance, transmittance, and X-ray diffraction in thin films with stoichiometric compositions of Ge1Sb 4Te7, Ge1Sb2Te4, Ge 2Sb2Te5, and Ge4Sb 1Te5. The resistivity, lattice constant, and the temperature at which transformation from the amorphous phase to the cubic crystalline structure occurs were calculated for each stoichiometric composition, and the energy activation was determined, applying Kissinger's model. It was found that the Ge4Sb1Te5 composition has the highest crystallization temperature (425 K), the highest resistivity (0.178 Ω cm), the greatest Ea (3.09 eV), and the lowest lattice constant (a=5.975 Å) in the cubic phase at 170°C.
AB - Thin amorphous films of GeSbTe have been widely employed in the technology used for phase change optical memory or compact disks. In this article, we report on measurements of resistance, transmittance, and X-ray diffraction in thin films with stoichiometric compositions of Ge1Sb 4Te7, Ge1Sb2Te4, Ge 2Sb2Te5, and Ge4Sb 1Te5. The resistivity, lattice constant, and the temperature at which transformation from the amorphous phase to the cubic crystalline structure occurs were calculated for each stoichiometric composition, and the energy activation was determined, applying Kissinger's model. It was found that the Ge4Sb1Te5 composition has the highest crystallization temperature (425 K), the highest resistivity (0.178 Ω cm), the greatest Ea (3.09 eV), and the lowest lattice constant (a=5.975 Å) in the cubic phase at 170°C.
KW - Amorphous materials
KW - Crystallization
KW - Electrical properties and measurements
KW - Structural properties
UR - http://www.scopus.com/inward/record.url?scp=10644259758&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2004.06.141
DO - 10.1016/j.tsf.2004.06.141
M3 - Artículo
SN - 0040-6090
VL - 471
SP - 243
EP - 247
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1-2
ER -