Structural, electric and kinetic parameters of ternary alloys of GeSbTe

E. Morales-Sánchez; E. F. Prokhorov; J. González-Hernández; A. Mendoza-Galván

doi:10.1016/j.tsf.2004.06.141

Structural, electric and kinetic parameters of ternary alloys of GeSbTe

E. Morales-Sánchez, E. F. Prokhorov, J. González-Hernández, A. Mendoza-Galván

Research output: Contribution to journal › Article › peer-review

94 Scopus citations

Abstract

Thin amorphous films of GeSbTe have been widely employed in the technology used for phase change optical memory or compact disks. In this article, we report on measurements of resistance, transmittance, and X-ray diffraction in thin films with stoichiometric compositions of Ge₁Sb ₄Te₇, Ge₁Sb₂Te₄, Ge ₂Sb₂Te₅, and Ge₄Sb ₁Te₅. The resistivity, lattice constant, and the temperature at which transformation from the amorphous phase to the cubic crystalline structure occurs were calculated for each stoichiometric composition, and the energy activation was determined, applying Kissinger's model. It was found that the Ge₄Sb₁Te₅ composition has the highest crystallization temperature (425 K), the highest resistivity (0.178 Ω cm), the greatest E_a (3.09 eV), and the lowest lattice constant (a=5.975 Å) in the cubic phase at 170°C.

Original language	English
Pages (from-to)	243-247
Number of pages	5
Journal	Thin Solid Films
Volume	471
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2004.06.141
State	Published - 3 Jan 2005
Externally published	Yes

Keywords

Amorphous materials
Crystallization
Electrical properties and measurements
Structural properties

Access to Document

10.1016/j.tsf.2004.06.141

Cite this

@article{99d2d8c193054ca0a6685299d31d4891,

title = "Structural, electric and kinetic parameters of ternary alloys of GeSbTe",

abstract = "Thin amorphous films of GeSbTe have been widely employed in the technology used for phase change optical memory or compact disks. In this article, we report on measurements of resistance, transmittance, and X-ray diffraction in thin films with stoichiometric compositions of Ge1Sb 4Te7, Ge1Sb2Te4, Ge 2Sb2Te5, and Ge4Sb 1Te5. The resistivity, lattice constant, and the temperature at which transformation from the amorphous phase to the cubic crystalline structure occurs were calculated for each stoichiometric composition, and the energy activation was determined, applying Kissinger's model. It was found that the Ge4Sb1Te5 composition has the highest crystallization temperature (425 K), the highest resistivity (0.178 Ω cm), the greatest Ea (3.09 eV), and the lowest lattice constant (a=5.975 {\AA}) in the cubic phase at 170°C.",

keywords = "Amorphous materials, Crystallization, Electrical properties and measurements, Structural properties",

author = "E. Morales-S{\'a}nchez and Prokhorov, {E. F.} and J. Gonz{\'a}lez-Hern{\'a}ndez and A. Mendoza-Galv{\'a}n",

year = "2005",

month = jan,

day = "3",

doi = "10.1016/j.tsf.2004.06.141",

language = "Ingl{\'e}s",

volume = "471",

pages = "243--247",

journal = "Thin Solid Films",

issn = "0040-6090",

number = "1-2",

}

TY - JOUR

T1 - Structural, electric and kinetic parameters of ternary alloys of GeSbTe

AU - Morales-Sánchez, E.

AU - Prokhorov, E. F.

AU - González-Hernández, J.

AU - Mendoza-Galván, A.

PY - 2005/1/3

Y1 - 2005/1/3

N2 - Thin amorphous films of GeSbTe have been widely employed in the technology used for phase change optical memory or compact disks. In this article, we report on measurements of resistance, transmittance, and X-ray diffraction in thin films with stoichiometric compositions of Ge1Sb 4Te7, Ge1Sb2Te4, Ge 2Sb2Te5, and Ge4Sb 1Te5. The resistivity, lattice constant, and the temperature at which transformation from the amorphous phase to the cubic crystalline structure occurs were calculated for each stoichiometric composition, and the energy activation was determined, applying Kissinger's model. It was found that the Ge4Sb1Te5 composition has the highest crystallization temperature (425 K), the highest resistivity (0.178 Ω cm), the greatest Ea (3.09 eV), and the lowest lattice constant (a=5.975 Å) in the cubic phase at 170°C.

AB - Thin amorphous films of GeSbTe have been widely employed in the technology used for phase change optical memory or compact disks. In this article, we report on measurements of resistance, transmittance, and X-ray diffraction in thin films with stoichiometric compositions of Ge1Sb 4Te7, Ge1Sb2Te4, Ge 2Sb2Te5, and Ge4Sb 1Te5. The resistivity, lattice constant, and the temperature at which transformation from the amorphous phase to the cubic crystalline structure occurs were calculated for each stoichiometric composition, and the energy activation was determined, applying Kissinger's model. It was found that the Ge4Sb1Te5 composition has the highest crystallization temperature (425 K), the highest resistivity (0.178 Ω cm), the greatest Ea (3.09 eV), and the lowest lattice constant (a=5.975 Å) in the cubic phase at 170°C.

KW - Amorphous materials

KW - Crystallization

KW - Electrical properties and measurements

KW - Structural properties

UR - http://www.scopus.com/inward/record.url?scp=10644259758&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2004.06.141

DO - 10.1016/j.tsf.2004.06.141

M3 - Artículo

SN - 0040-6090

VL - 471

SP - 243

EP - 247

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Structural, electric and kinetic parameters of ternary alloys of GeSbTe

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this