Structural characterization by HRXRD and Raman scattering of Al xGa1-xSb/GaSb heterostructure

A. Mendez-Lopez, J. Diaz-Reyes, J. Martinez-Juarez, M. Galván-Arellano

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

High resolution X-ray diffraction profiles were obtained from Al xGa1-xSb layers grown on (001) GaSb substrates by Liquid Phase Epitaxy (LPE). The out of plane lattice parameter was estimated directly from the asymmetrical diffractions (115) and (-1-15) alloy. These results show that some of the layers are more strained than others. The out of plane lattice parameter as a function of Al content is higher than the corresponding bulk lattice parameter of AlxGa1-xSb layers obtained with Vegard's law. Two peaks are observed in their Raman spectra over this composition range. The assignment of the observed modes to GaSb-like is discussed.

Idioma originalInglés
Título de la publicación alojadaAdvances in Sensors, Signals and Materials - 3rd WSEAS International Conference on Sensors and Signals, SENSIG'10, 3rd WSEAS International Conference on Materials Science, MATERIALS'10
EditorialWorld Scientific and Engineering Academy and Society
Páginas110-114
Número de páginas5
ISBN (versión impresa)9789604742486
EstadoPublicada - 2010

Serie de la publicación

NombreAdvances in Sensors, Signals and Materials - 3rd WSEAS International Conference on Sensors and Signals, SENSIG'10, 3rd WSEAS International Conference on Materials Science, MATERIALS'10

Huella

Profundice en los temas de investigación de 'Structural characterization by HRXRD and Raman scattering of Al xGa1-xSb/GaSb heterostructure'. En conjunto forman una huella única.

Citar esto