Structural characterization by HRXRD and Raman scattering of Al xGa1-xSb/GaSb heterostructure

A. Mendez-Lopez, J. Diaz-Reyes, J. Martinez-Juarez, M. Galván-Arellano

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

High resolution X-ray diffraction profiles were obtained from Al xGa1-xSb layers grown on (001) GaSb substrates by Liquid Phase Epitaxy (LPE). The out of plane lattice parameter was estimated directly from the asymmetrical diffractions (115) and (-1-15) alloy. These results show that some of the layers are more strained than others. The out of plane lattice parameter as a function of Al content is higher than the corresponding bulk lattice parameter of AlxGa1-xSb layers obtained with Vegard's law. Two peaks are observed in their Raman spectra over this composition range. The assignment of the observed modes to GaSb-like is discussed.

Original languageEnglish
Title of host publicationAdvances in Sensors, Signals and Materials - 3rd WSEAS International Conference on Sensors and Signals, SENSIG'10, 3rd WSEAS International Conference on Materials Science, MATERIALS'10
PublisherWorld Scientific and Engineering Academy and Society
Pages110-114
Number of pages5
ISBN (Print)9789604742486
StatePublished - 2010

Publication series

NameAdvances in Sensors, Signals and Materials - 3rd WSEAS International Conference on Sensors and Signals, SENSIG'10, 3rd WSEAS International Conference on Materials Science, MATERIALS'10

Keywords

  • AlGaSb
  • Liquid phase epitaxy
  • Raman scattering
  • Ternary alloy
  • X-ray diffraction

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