Structural and optical properties of Cu-doped CdTe films with hexagonal phase grown by pulsed laser deposition

F. De Moure-Flores; J. G. Quiñones-Galván; A. Guillén-Cervantes; J. Santoyo-Salazar; A. Hernández-Hernández; M. De La; M. Zapata-Torres; M. Meléndez-Lira

doi:10.1063/1.4721275

Structural and optical properties of Cu-doped CdTe films with hexagonal phase grown by pulsed laser deposition

F. De Moure-Flores, J. G. Quiñones-Galván, A. Guillén-Cervantes, J. Santoyo-Salazar, A. Hernández-Hernández, M. De La, M. Zapata-Torres, M. Meléndez-Lira

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

19 Citas (Scopus)

Resumen

Cu-doped CdTe thin films were prepared by pulsed laser deposition on Corning glass substrates using powders as target. Films were deposited at substrate temperatures ranging from 100 to 300 °C. The X-ray diffraction shows that both the Cu-doping and the increase in the substrate temperature promote the presence of the hexagonal CdTe phase. For a substrate temperature of 300 °C a CdTe: Cu film with hexagonal phase was obtained. Raman and EDS analysis indicate that the films grew with an excess of Te, which indicates that CdTe: Cu films have p-type conductivity.

Idioma original	Inglés
Número de artículo	022131
Publicación	AIP Advances
Volumen	2
N.º	2
DOI	https://doi.org/10.1063/1.4721275
Estado	Publicada - jun. 2012
Publicado de forma externa	Sí

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title = "Structural and optical properties of Cu-doped CdTe films with hexagonal phase grown by pulsed laser deposition",

abstract = "Cu-doped CdTe thin films were prepared by pulsed laser deposition on Corning glass substrates using powders as target. Films were deposited at substrate temperatures ranging from 100 to 300 °C. The X-ray diffraction shows that both the Cu-doping and the increase in the substrate temperature promote the presence of the hexagonal CdTe phase. For a substrate temperature of 300 °C a CdTe: Cu film with hexagonal phase was obtained. Raman and EDS analysis indicate that the films grew with an excess of Te, which indicates that CdTe: Cu films have p-type conductivity.",

author = "{De Moure-Flores}, F. and Qui{\~n}ones-Galv{\'a}n, {J. G.} and A. Guill{\'e}n-Cervantes and J. Santoyo-Salazar and A. Hern{\'a}ndez-Hern{\'a}ndez and {De La}, M. and M. Zapata-Torres and M. Mel{\'e}ndez-Lira",

note = "Funding Information: We acknowledge the technical support of Marcela Guerrero, A. Garc{\'i}a-Sotelo, A.B. Soto, Zacar{\'i}as Rivera and Josue Esau Romero Ibarra from CINVESTAV-IPN and the partial support by CONACyT-M{\'e}xico.",

year = "2012",

month = jun,

doi = "10.1063/1.4721275",

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volume = "2",

journal = "AIP Advances",

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T1 - Structural and optical properties of Cu-doped CdTe films with hexagonal phase grown by pulsed laser deposition

AU - De Moure-Flores, F.

AU - Quiñones-Galván, J. G.

AU - Guillén-Cervantes, A.

AU - Santoyo-Salazar, J.

AU - Hernández-Hernández, A.

AU - De La, M.

AU - Zapata-Torres, M.

AU - Meléndez-Lira, M.

N1 - Funding Information: We acknowledge the technical support of Marcela Guerrero, A. García-Sotelo, A.B. Soto, Zacarías Rivera and Josue Esau Romero Ibarra from CINVESTAV-IPN and the partial support by CONACyT-México.

PY - 2012/6

Y1 - 2012/6

N2 - Cu-doped CdTe thin films were prepared by pulsed laser deposition on Corning glass substrates using powders as target. Films were deposited at substrate temperatures ranging from 100 to 300 °C. The X-ray diffraction shows that both the Cu-doping and the increase in the substrate temperature promote the presence of the hexagonal CdTe phase. For a substrate temperature of 300 °C a CdTe: Cu film with hexagonal phase was obtained. Raman and EDS analysis indicate that the films grew with an excess of Te, which indicates that CdTe: Cu films have p-type conductivity.

AB - Cu-doped CdTe thin films were prepared by pulsed laser deposition on Corning glass substrates using powders as target. Films were deposited at substrate temperatures ranging from 100 to 300 °C. The X-ray diffraction shows that both the Cu-doping and the increase in the substrate temperature promote the presence of the hexagonal CdTe phase. For a substrate temperature of 300 °C a CdTe: Cu film with hexagonal phase was obtained. Raman and EDS analysis indicate that the films grew with an excess of Te, which indicates that CdTe: Cu films have p-type conductivity.

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U2 - 10.1063/1.4721275

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Structural and optical properties of Cu-doped CdTe films with hexagonal phase grown by pulsed laser deposition

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