Abstract
Cu-doped CdTe thin films were prepared by pulsed laser deposition on Corning glass substrates using powders as target. Films were deposited at substrate temperatures ranging from 100 to 300 °C. The X-ray diffraction shows that both the Cu-doping and the increase in the substrate temperature promote the presence of the hexagonal CdTe phase. For a substrate temperature of 300 °C a CdTe: Cu film with hexagonal phase was obtained. Raman and EDS analysis indicate that the films grew with an excess of Te, which indicates that CdTe: Cu films have p-type conductivity.
Original language | English |
---|---|
Article number | 022131 |
Journal | AIP Advances |
Volume | 2 |
Issue number | 2 |
DOIs | |
State | Published - Jun 2012 |
Externally published | Yes |