TY - JOUR
T1 - Structural and optical characterization of wurtzite type ZnS
AU - Díaz-Reyes, J.
AU - Castillo-Ojeda, R. S.
AU - Sánchez-Espíndola, R.
AU - Galván-Arellano, M.
AU - Zaca-Morán, O.
N1 - Publisher Copyright:
©2014 Elsevier B.V. All rights reserved.
PY - 2015/2
Y1 - 2015/2
N2 - ZnS films were grown on (001) GaAs substrates at different temperatures by RF magnetron sputtering. The ZnS chemical stoichiometry was determined by Energy-dispersive X-ray spectroscopy (EDS), besides it allowed to find the residual impurities, mainly oxygen. The X-ray diffraction (XRD) analysis and Raman scattering reveal that ZnS deposited thin films showed hexagonal wurtzite crystalline phase. The films average crystallite size range was from 8.15 to 31.95 nm, which was determined using the Debye-Scherrer equation for the peak W(101). Besides an experimental study of first- and second-order Raman scattering of ZnS films is made. An energy level diagram involving oxygen traps and interstitial sulphur ions is used to explain the origin of the radiative transitions observed in the room temperature photoluminescence (PL) spectra.
AB - ZnS films were grown on (001) GaAs substrates at different temperatures by RF magnetron sputtering. The ZnS chemical stoichiometry was determined by Energy-dispersive X-ray spectroscopy (EDS), besides it allowed to find the residual impurities, mainly oxygen. The X-ray diffraction (XRD) analysis and Raman scattering reveal that ZnS deposited thin films showed hexagonal wurtzite crystalline phase. The films average crystallite size range was from 8.15 to 31.95 nm, which was determined using the Debye-Scherrer equation for the peak W(101). Besides an experimental study of first- and second-order Raman scattering of ZnS films is made. An energy level diagram involving oxygen traps and interstitial sulphur ions is used to explain the origin of the radiative transitions observed in the room temperature photoluminescence (PL) spectra.
KW - Hexagonal wurtzite-type ZnS
KW - II-VI semiconductor compounds
KW - Photoluminescence
KW - Raman scattering
KW - SEM-EDS
KW - X-Ray diffraction
UR - http://www.scopus.com/inward/record.url?scp=84914109441&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2014.11.012
DO - 10.1016/j.cap.2014.11.012
M3 - Artículo
SN - 1567-1739
VL - 15
SP - 103
EP - 109
JO - Current Applied Physics
JF - Current Applied Physics
IS - 2
ER -