Structural and optical characterization of wurtzite type ZnS

J. Díaz-Reyes, R. S. Castillo-Ojeda, R. Sánchez-Espíndola, M. Galván-Arellano, O. Zaca-Morán

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48 Scopus citations

Abstract

ZnS films were grown on (001) GaAs substrates at different temperatures by RF magnetron sputtering. The ZnS chemical stoichiometry was determined by Energy-dispersive X-ray spectroscopy (EDS), besides it allowed to find the residual impurities, mainly oxygen. The X-ray diffraction (XRD) analysis and Raman scattering reveal that ZnS deposited thin films showed hexagonal wurtzite crystalline phase. The films average crystallite size range was from 8.15 to 31.95 nm, which was determined using the Debye-Scherrer equation for the peak W(101). Besides an experimental study of first- and second-order Raman scattering of ZnS films is made. An energy level diagram involving oxygen traps and interstitial sulphur ions is used to explain the origin of the radiative transitions observed in the room temperature photoluminescence (PL) spectra.

Original languageEnglish
Pages (from-to)103-109
Number of pages7
JournalCurrent Applied Physics
Volume15
Issue number2
DOIs
StatePublished - Feb 2015

Keywords

  • Hexagonal wurtzite-type ZnS
  • II-VI semiconductor compounds
  • Photoluminescence
  • Raman scattering
  • SEM-EDS
  • X-Ray diffraction

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