TY - JOUR
T1 - Structural and optical characterization of GaNAs layers grown by molecular beam epitaxy
AU - Pulzara-Mora, A.
AU - Meĺndez-Lira, M.
AU - Falcony-Guajardo, C.
AU - López-López, M.
AU - Vidal, M. A.
AU - Jiḿnez-Sandoval, S.
AU - Aguilar-Frutis, M. A.
N1 - Funding Information:
This work was partially supported by CONACyT-Mexico and UC-MEXUS. The authors would like to thank the technical assistance of E. Gomez, R. Fragoso, Z. Rivera, and A. Guillen. One of the authors (A.P.M.) thanks the support by the program CUAUTHEMOC III SRE-Mexico.
PY - 2006/5
Y1 - 2006/5
N2 - We have grown Ga Nx As1-x layers by molecular beam epitaxy on GaAs(100) substrates using a radio frequency plasma nitrogen source and solid sources for Ga and As. Employing reflection high-energy electron diffraction (RHEED), the GaNAs growth mode was in situ monitored. A three dimensional (3D) growth mode was obtained at the low growth temperature of 420 °C. At higher temperatures streaky RHEED patterns were observed during all the GaNAs deposition, indicating a two dimensional (2D) growth mode. The structural and optical properties of the GaNAs layers were studied by employing high-resolution x-ray diffraction, atomic force microscopy, Raman scattering, and spectroscopic ellipsometry. The films grown in a 3D mode presented high density of crystal defects, degraded structural properties, and broad optical transitions. In contrast, GaNAs layers grown in a 2D mode are pseudomorphic with high crystal quality. The properties of samples with a high N concentration were improved by first growing a GaNAs layer with a low N content.
AB - We have grown Ga Nx As1-x layers by molecular beam epitaxy on GaAs(100) substrates using a radio frequency plasma nitrogen source and solid sources for Ga and As. Employing reflection high-energy electron diffraction (RHEED), the GaNAs growth mode was in situ monitored. A three dimensional (3D) growth mode was obtained at the low growth temperature of 420 °C. At higher temperatures streaky RHEED patterns were observed during all the GaNAs deposition, indicating a two dimensional (2D) growth mode. The structural and optical properties of the GaNAs layers were studied by employing high-resolution x-ray diffraction, atomic force microscopy, Raman scattering, and spectroscopic ellipsometry. The films grown in a 3D mode presented high density of crystal defects, degraded structural properties, and broad optical transitions. In contrast, GaNAs layers grown in a 2D mode are pseudomorphic with high crystal quality. The properties of samples with a high N concentration were improved by first growing a GaNAs layer with a low N content.
UR - http://www.scopus.com/inward/record.url?scp=33744783963&partnerID=8YFLogxK
U2 - 10.1116/1.2201451
DO - 10.1116/1.2201451
M3 - Artículo
SN - 1071-1023
VL - 24
SP - 1591
EP - 1594
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IS - 3
ER -