Strain dependence of the direct energy bandgap in thin silicon on insulator layers

J. Munguía; J. M. Bluet; H. Chouaib; G. Bremond; M. Mermoux; C. Bru-Chevallier

doi:10.1088/0022-3727/43/25/255401

Strain dependence of the direct energy bandgap in thin silicon on insulator layers

J. Munguía, J. M. Bluet, H. Chouaib, G. Bremond, M. Mermoux, C. Bru-Chevallier

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7 Citas (Scopus)

Resumen

Photoreflectance spectroscopy is applied on tensilely strained silicon on insulator (sSOI) thin layers in order to evaluate the biaxial strain effect on the Si direct bandgap. The measured redshift of the E′₀ transition (i.e. direct bandgap) with strain (∼-100 meV/%) corresponds to theoretical predictions. The hydrostatic and valence band deformation potential constants for E₁ (i.e. transition close to the L point along the Λ-direction) are also measured: D¹₁ =-7.5 ± 0.5 eV and |D³₃| = 3.8 ± 1 eV.

Idioma original	Inglés
Número de artículo	255401
Publicación	Journal of Physics D: Applied Physics
Volumen	43
N.º	25
DOI	https://doi.org/10.1088/0022-3727/43/25/255401
Estado	Publicada - 2010
Publicado de forma externa	Sí

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title = "Strain dependence of the direct energy bandgap in thin silicon on insulator layers",

abstract = "Photoreflectance spectroscopy is applied on tensilely strained silicon on insulator (sSOI) thin layers in order to evaluate the biaxial strain effect on the Si direct bandgap. The measured redshift of the E′0 transition (i.e. direct bandgap) with strain (∼-100 meV/%) corresponds to theoretical predictions. The hydrostatic and valence band deformation potential constants for E1 (i.e. transition close to the L point along the Λ-direction) are also measured: D11 =-7.5 ± 0.5 eV and |D33| = 3.8 ± 1 eV.",

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T1 - Strain dependence of the direct energy bandgap in thin silicon on insulator layers

AU - Munguía, J.

AU - Bluet, J. M.

AU - Chouaib, H.

AU - Bremond, G.

AU - Mermoux, M.

AU - Bru-Chevallier, C.

PY - 2010

Y1 - 2010

N2 - Photoreflectance spectroscopy is applied on tensilely strained silicon on insulator (sSOI) thin layers in order to evaluate the biaxial strain effect on the Si direct bandgap. The measured redshift of the E′0 transition (i.e. direct bandgap) with strain (∼-100 meV/%) corresponds to theoretical predictions. The hydrostatic and valence band deformation potential constants for E1 (i.e. transition close to the L point along the Λ-direction) are also measured: D11 =-7.5 ± 0.5 eV and |D33| = 3.8 ± 1 eV.

AB - Photoreflectance spectroscopy is applied on tensilely strained silicon on insulator (sSOI) thin layers in order to evaluate the biaxial strain effect on the Si direct bandgap. The measured redshift of the E′0 transition (i.e. direct bandgap) with strain (∼-100 meV/%) corresponds to theoretical predictions. The hydrostatic and valence band deformation potential constants for E1 (i.e. transition close to the L point along the Λ-direction) are also measured: D11 =-7.5 ± 0.5 eV and |D33| = 3.8 ± 1 eV.

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U2 - 10.1088/0022-3727/43/25/255401

DO - 10.1088/0022-3727/43/25/255401

M3 - Artículo

SN - 0022-3727

VL - 43

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 25

M1 - 255401

ER -

Strain dependence of the direct energy bandgap in thin silicon on insulator layers

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