Strain dependence of the direct energy bandgap in thin silicon on insulator layers

J. Munguía; J. M. Bluet; H. Chouaib; G. Bremond; M. Mermoux; C. Bru-Chevallier

doi:10.1088/0022-3727/43/25/255401

Strain dependence of the direct energy bandgap in thin silicon on insulator layers

J. Munguía, J. M. Bluet, H. Chouaib, G. Bremond, M. Mermoux, C. Bru-Chevallier

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7 Scopus citations

Abstract

Photoreflectance spectroscopy is applied on tensilely strained silicon on insulator (sSOI) thin layers in order to evaluate the biaxial strain effect on the Si direct bandgap. The measured redshift of the E′₀ transition (i.e. direct bandgap) with strain (∼-100 meV/%) corresponds to theoretical predictions. The hydrostatic and valence band deformation potential constants for E₁ (i.e. transition close to the L point along the Λ-direction) are also measured: D¹₁ =-7.5 ± 0.5 eV and |D³₃| = 3.8 ± 1 eV.

Original language	English
Article number	255401
Journal	Journal of Physics D: Applied Physics
Volume	43
Issue number	25
DOIs	https://doi.org/10.1088/0022-3727/43/25/255401
State	Published - 2010
Externally published	Yes

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@article{3a6caea0912a4def9fd75340fd1d1135,

title = "Strain dependence of the direct energy bandgap in thin silicon on insulator layers",

abstract = "Photoreflectance spectroscopy is applied on tensilely strained silicon on insulator (sSOI) thin layers in order to evaluate the biaxial strain effect on the Si direct bandgap. The measured redshift of the E′0 transition (i.e. direct bandgap) with strain (∼-100 meV/%) corresponds to theoretical predictions. The hydrostatic and valence band deformation potential constants for E1 (i.e. transition close to the L point along the Λ-direction) are also measured: D11 =-7.5 ± 0.5 eV and |D33| = 3.8 ± 1 eV.",

author = "J. Mungu{\'i}a and Bluet, {J. M.} and H. Chouaib and G. Bremond and M. Mermoux and C. Bru-Chevallier",

year = "2010",

doi = "10.1088/0022-3727/43/25/255401",

language = "Ingl{\'e}s",

volume = "43",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

number = "25",

}

TY - JOUR

T1 - Strain dependence of the direct energy bandgap in thin silicon on insulator layers

AU - Munguía, J.

AU - Bluet, J. M.

AU - Chouaib, H.

AU - Bremond, G.

AU - Mermoux, M.

AU - Bru-Chevallier, C.

PY - 2010

Y1 - 2010

N2 - Photoreflectance spectroscopy is applied on tensilely strained silicon on insulator (sSOI) thin layers in order to evaluate the biaxial strain effect on the Si direct bandgap. The measured redshift of the E′0 transition (i.e. direct bandgap) with strain (∼-100 meV/%) corresponds to theoretical predictions. The hydrostatic and valence band deformation potential constants for E1 (i.e. transition close to the L point along the Λ-direction) are also measured: D11 =-7.5 ± 0.5 eV and |D33| = 3.8 ± 1 eV.

AB - Photoreflectance spectroscopy is applied on tensilely strained silicon on insulator (sSOI) thin layers in order to evaluate the biaxial strain effect on the Si direct bandgap. The measured redshift of the E′0 transition (i.e. direct bandgap) with strain (∼-100 meV/%) corresponds to theoretical predictions. The hydrostatic and valence band deformation potential constants for E1 (i.e. transition close to the L point along the Λ-direction) are also measured: D11 =-7.5 ± 0.5 eV and |D33| = 3.8 ± 1 eV.

UR - http://www.scopus.com/inward/record.url?scp=77953602834&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/43/25/255401

DO - 10.1088/0022-3727/43/25/255401

M3 - Artículo

SN - 0022-3727

VL - 43

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 25

M1 - 255401

ER -

Strain dependence of the direct energy bandgap in thin silicon on insulator layers

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