Stimulation of excitonic and defect-related luminescence in porous SiC

T. V. Torchynska; A. Díaz Cano; M. Dybic; S. Ostapenko; M. Mynbaeva

doi:10.1016/j.physb.2005.12.094

Stimulation of excitonic and defect-related luminescence in porous SiC

Título traducido de la contribución: Estimulación de la luminiscencia excitónica y relacionada con defectos en SiC poroso

T. V. Torchynska, A. Díaz Cano, M. Dybic, S. Ostapenko, M. Mynbaeva

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

54 Citas (Scopus)

Resumen

This paper presents the results of porous SiC (PsiC) characterization using photoluminescence (PL) and scanning electronic microscopy. It is shown that the intensities of visible PL bands increase monotonically with the thickness rise of PSiC layers. Intensity enhancement for excitonic PL bands (2.86, 3.05 and 3.28 eV) is attributed to the recombination rate increasing (recombination time decreasing) due to electron-hole confinement effect in SiC nano-crystallites. The intensity increasing for defect-related PL bands (1.82, 2.10, 2.30 and 2.58 eV) is assigned to grow up of defect concentrations on the PSiC surface at the etching process.

Título traducido de la contribución	Estimulación de la luminiscencia excitónica y relacionada con defectos en SiC poroso
Idioma original	Inglés
Páginas (desde-hasta)	367-369
Número de páginas	3
Publicación	Physica B: Condensed Matter
Volumen	376-377
N.º	1
DOI	https://doi.org/10.1016/j.physb.2005.12.094
Estado	Publicada - 1 abr. 2006
Evento	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duración: 24 jul. 2005 → 29 jul. 2005

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title = "Stimulation of excitonic and defect-related luminescence in porous SiC",

abstract = "This paper presents the results of porous SiC (PsiC) characterization using photoluminescence (PL) and scanning electronic microscopy. It is shown that the intensities of visible PL bands increase monotonically with the thickness rise of PSiC layers. Intensity enhancement for excitonic PL bands (2.86, 3.05 and 3.28 eV) is attributed to the recombination rate increasing (recombination time decreasing) due to electron-hole confinement effect in SiC nano-crystallites. The intensity increasing for defect-related PL bands (1.82, 2.10, 2.30 and 2.58 eV) is assigned to grow up of defect concentrations on the PSiC surface at the etching process.",

keywords = "Defects, Photoluminescence, Porous SiC",

author = "Torchynska, {T. V.} and {D{\'i}az Cano}, A. and M. Dybic and S. Ostapenko and M. Mynbaeva",

note = "Funding Information: The work was supported by CONACYT Mexico (Project U42436-Y) and National Science Foundation award DMI-0218967. The work at Ioffe Institute was supported by Cooperative Program (NICOP) administered by the Office of Naval Research under Grant N00014-01-1-0828.; Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

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doi = "10.1016/j.physb.2005.12.094",

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T1 - Stimulation of excitonic and defect-related luminescence in porous SiC

AU - Torchynska, T. V.

AU - Díaz Cano, A.

AU - Dybic, M.

AU - Ostapenko, S.

AU - Mynbaeva, M.

N1 - Funding Information: The work was supported by CONACYT Mexico (Project U42436-Y) and National Science Foundation award DMI-0218967. The work at Ioffe Institute was supported by Cooperative Program (NICOP) administered by the Office of Naval Research under Grant N00014-01-1-0828.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - This paper presents the results of porous SiC (PsiC) characterization using photoluminescence (PL) and scanning electronic microscopy. It is shown that the intensities of visible PL bands increase monotonically with the thickness rise of PSiC layers. Intensity enhancement for excitonic PL bands (2.86, 3.05 and 3.28 eV) is attributed to the recombination rate increasing (recombination time decreasing) due to electron-hole confinement effect in SiC nano-crystallites. The intensity increasing for defect-related PL bands (1.82, 2.10, 2.30 and 2.58 eV) is assigned to grow up of defect concentrations on the PSiC surface at the etching process.

AB - This paper presents the results of porous SiC (PsiC) characterization using photoluminescence (PL) and scanning electronic microscopy. It is shown that the intensities of visible PL bands increase monotonically with the thickness rise of PSiC layers. Intensity enhancement for excitonic PL bands (2.86, 3.05 and 3.28 eV) is attributed to the recombination rate increasing (recombination time decreasing) due to electron-hole confinement effect in SiC nano-crystallites. The intensity increasing for defect-related PL bands (1.82, 2.10, 2.30 and 2.58 eV) is assigned to grow up of defect concentrations on the PSiC surface at the etching process.

KW - Defects

KW - Photoluminescence

KW - Porous SiC

UR - http://www.scopus.com/inward/record.url?scp=33645135107&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2005.12.094

DO - 10.1016/j.physb.2005.12.094

M3 - Artículo de la conferencia

AN - SCOPUS:33645135107

SN - 0921-4526

VL - 376-377

SP - 367

EP - 369

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

Y2 - 24 July 2005 through 29 July 2005

ER -

Stimulation of excitonic and defect-related luminescence in porous SiC

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