Stimulation of excitonic and defect-related luminescence in porous SiC

T. V. Torchynska; A. Díaz Cano; M. Dybic; S. Ostapenko; M. Mynbaeva

doi:10.1016/j.physb.2005.12.094

Stimulation of excitonic and defect-related luminescence in porous SiC

T. V. Torchynska, A. Díaz Cano, M. Dybic, S. Ostapenko, M. Mynbaeva

Research output: Contribution to journal › Conference article › peer-review

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Abstract

This paper presents the results of porous SiC (PsiC) characterization using photoluminescence (PL) and scanning electronic microscopy. It is shown that the intensities of visible PL bands increase monotonically with the thickness rise of PSiC layers. Intensity enhancement for excitonic PL bands (2.86, 3.05 and 3.28 eV) is attributed to the recombination rate increasing (recombination time decreasing) due to electron-hole confinement effect in SiC nano-crystallites. The intensity increasing for defect-related PL bands (1.82, 2.10, 2.30 and 2.58 eV) is assigned to grow up of defect concentrations on the PSiC surface at the etching process.

Translated title of the contribution	Estimulación de la luminiscencia excitónica y relacionada con defectos en SiC poroso
Original language	English
Pages (from-to)	367-369
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.094
State	Published - 1 Apr 2006
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: 24 Jul 2005 → 29 Jul 2005

Keywords

Defects
Photoluminescence
Porous SiC

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10.1016/j.physb.2005.12.094

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title = "Stimulation of excitonic and defect-related luminescence in porous SiC",

abstract = "This paper presents the results of porous SiC (PsiC) characterization using photoluminescence (PL) and scanning electronic microscopy. It is shown that the intensities of visible PL bands increase monotonically with the thickness rise of PSiC layers. Intensity enhancement for excitonic PL bands (2.86, 3.05 and 3.28 eV) is attributed to the recombination rate increasing (recombination time decreasing) due to electron-hole confinement effect in SiC nano-crystallites. The intensity increasing for defect-related PL bands (1.82, 2.10, 2.30 and 2.58 eV) is assigned to grow up of defect concentrations on the PSiC surface at the etching process.",

keywords = "Defects, Photoluminescence, Porous SiC",

author = "Torchynska, {T. V.} and {D{\'i}az Cano}, A. and M. Dybic and S. Ostapenko and M. Mynbaeva",

note = "Funding Information: The work was supported by CONACYT Mexico (Project U42436-Y) and National Science Foundation award DMI-0218967. The work at Ioffe Institute was supported by Cooperative Program (NICOP) administered by the Office of Naval Research under Grant N00014-01-1-0828.; Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

year = "2006",

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day = "1",

doi = "10.1016/j.physb.2005.12.094",

language = "Ingl{\'e}s",

volume = "376-377",

pages = "367--369",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

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TY - JOUR

T1 - Stimulation of excitonic and defect-related luminescence in porous SiC

AU - Torchynska, T. V.

AU - Díaz Cano, A.

AU - Dybic, M.

AU - Ostapenko, S.

AU - Mynbaeva, M.

N1 - Funding Information: The work was supported by CONACYT Mexico (Project U42436-Y) and National Science Foundation award DMI-0218967. The work at Ioffe Institute was supported by Cooperative Program (NICOP) administered by the Office of Naval Research under Grant N00014-01-1-0828.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - This paper presents the results of porous SiC (PsiC) characterization using photoluminescence (PL) and scanning electronic microscopy. It is shown that the intensities of visible PL bands increase monotonically with the thickness rise of PSiC layers. Intensity enhancement for excitonic PL bands (2.86, 3.05 and 3.28 eV) is attributed to the recombination rate increasing (recombination time decreasing) due to electron-hole confinement effect in SiC nano-crystallites. The intensity increasing for defect-related PL bands (1.82, 2.10, 2.30 and 2.58 eV) is assigned to grow up of defect concentrations on the PSiC surface at the etching process.

AB - This paper presents the results of porous SiC (PsiC) characterization using photoluminescence (PL) and scanning electronic microscopy. It is shown that the intensities of visible PL bands increase monotonically with the thickness rise of PSiC layers. Intensity enhancement for excitonic PL bands (2.86, 3.05 and 3.28 eV) is attributed to the recombination rate increasing (recombination time decreasing) due to electron-hole confinement effect in SiC nano-crystallites. The intensity increasing for defect-related PL bands (1.82, 2.10, 2.30 and 2.58 eV) is assigned to grow up of defect concentrations on the PSiC surface at the etching process.

KW - Defects

KW - Photoluminescence

KW - Porous SiC

UR - http://www.scopus.com/inward/record.url?scp=33645135107&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2005.12.094

DO - 10.1016/j.physb.2005.12.094

M3 - Artículo de la conferencia

AN - SCOPUS:33645135107

SN - 0921-4526

VL - 376-377

SP - 367

EP - 369

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

Y2 - 24 July 2005 through 29 July 2005

ER -

Stimulation of excitonic and defect-related luminescence in porous SiC

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Keywords

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