TY - JOUR
T1 - Stimulation of excitonic and defect-related luminescence in porous SiC
AU - Torchynska, T. V.
AU - Díaz Cano, A.
AU - Dybic, M.
AU - Ostapenko, S.
AU - Mynbaeva, M.
N1 - Funding Information:
The work was supported by CONACYT Mexico (Project U42436-Y) and National Science Foundation award DMI-0218967. The work at Ioffe Institute was supported by Cooperative Program (NICOP) administered by the Office of Naval Research under Grant N00014-01-1-0828.
PY - 2006/4/1
Y1 - 2006/4/1
N2 - This paper presents the results of porous SiC (PsiC) characterization using photoluminescence (PL) and scanning electronic microscopy. It is shown that the intensities of visible PL bands increase monotonically with the thickness rise of PSiC layers. Intensity enhancement for excitonic PL bands (2.86, 3.05 and 3.28 eV) is attributed to the recombination rate increasing (recombination time decreasing) due to electron-hole confinement effect in SiC nano-crystallites. The intensity increasing for defect-related PL bands (1.82, 2.10, 2.30 and 2.58 eV) is assigned to grow up of defect concentrations on the PSiC surface at the etching process.
AB - This paper presents the results of porous SiC (PsiC) characterization using photoluminescence (PL) and scanning electronic microscopy. It is shown that the intensities of visible PL bands increase monotonically with the thickness rise of PSiC layers. Intensity enhancement for excitonic PL bands (2.86, 3.05 and 3.28 eV) is attributed to the recombination rate increasing (recombination time decreasing) due to electron-hole confinement effect in SiC nano-crystallites. The intensity increasing for defect-related PL bands (1.82, 2.10, 2.30 and 2.58 eV) is assigned to grow up of defect concentrations on the PSiC surface at the etching process.
KW - Defects
KW - Photoluminescence
KW - Porous SiC
UR - http://www.scopus.com/inward/record.url?scp=33645135107&partnerID=8YFLogxK
U2 - 10.1016/j.physb.2005.12.094
DO - 10.1016/j.physb.2005.12.094
M3 - Artículo de la conferencia
AN - SCOPUS:33645135107
SN - 0921-4526
VL - 376-377
SP - 367
EP - 369
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
IS - 1
T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors
Y2 - 24 July 2005 through 29 July 2005
ER -