Size dependent photoluminescence of Si nano-crystals embedded in amorphous silicon

A. L.Quintos Vasques; T. V. Torchynska; G. Polupan; Y. Matsumoto; L. Khomenkova; L. V. Shcherbyna

Size dependent photoluminescence of Si nano-crystals embedded in amorphous silicon

Título traducido de la contribución: Fotoluminiscencia dependiente del tamaño de nanocristales de Si incrustados en silicio amorfo

A. L.Quintos Vasques, T. V. Torchynska, G. Polupan, Y. Matsumoto, L. Khomenkova, L. V. Shcherbyna

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

7 Citas (Scopus)

Resumen

This paper presents the results of PL spectrum studies for Si nano-crystallites embedded in amorphous silicon matrix. Investigated layers were deposited by the hot-wire CVD method on glass substrates at the wafer temperature 300°C and different filament temperatures from the range 1650-1950°C. It was shown that variation of temperatures of filament (hot-wire) allows to produce the films with desirable parameters. Using of X-ray diffraction and photoluminescence methods the correlation between some photoluminescence bands and the sizes of Si nano-crystallites as well as the amorphous phase volume was shown. The nature of light emission is discussed.

Título traducido de la contribución	Fotoluminiscencia dependiente del tamaño de nanocristales de Si incrustados en silicio amorfo
Idioma original	Inglés
Páginas (desde-hasta)	71-76
Número de páginas	6
Publicación	Solid State Phenomena
Volumen	131-133
Estado	Publicada - 2008
Evento	12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007 - Erice, Italia Duración: 14 oct. 2007 → 19 oct. 2007

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title = "Size dependent photoluminescence of Si nano-crystals embedded in amorphous silicon",

abstract = "This paper presents the results of PL spectrum studies for Si nano-crystallites embedded in amorphous silicon matrix. Investigated layers were deposited by the hot-wire CVD method on glass substrates at the wafer temperature 300°C and different filament temperatures from the range 1650-1950°C. It was shown that variation of temperatures of filament (hot-wire) allows to produce the films with desirable parameters. Using of X-ray diffraction and photoluminescence methods the correlation between some photoluminescence bands and the sizes of Si nano-crystallites as well as the amorphous phase volume was shown. The nature of light emission is discussed.",

keywords = "Amorphous silicon, HW-CVD, Photoluminescence, Silicon nanostructures, Temperature dependence, XRD",

author = "Vasques, {A. L.Quintos} and Torchynska, {T. V.} and G. Polupan and Y. Matsumoto and L. Khomenkova and Shcherbyna, {L. V.}",

year = "2008",

language = "Ingl{\'e}s",

volume = "131-133",

pages = "71--76",

journal = "Solid State Phenomena",

issn = "1012-0394",

publisher = "Scientific.net",

note = "12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007 ; Conference date: 14-10-2007 Through 19-10-2007",

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TY - JOUR

T1 - Size dependent photoluminescence of Si nano-crystals embedded in amorphous silicon

AU - Vasques, A. L.Quintos

AU - Torchynska, T. V.

AU - Polupan, G.

AU - Matsumoto, Y.

AU - Khomenkova, L.

AU - Shcherbyna, L. V.

PY - 2008

Y1 - 2008

N2 - This paper presents the results of PL spectrum studies for Si nano-crystallites embedded in amorphous silicon matrix. Investigated layers were deposited by the hot-wire CVD method on glass substrates at the wafer temperature 300°C and different filament temperatures from the range 1650-1950°C. It was shown that variation of temperatures of filament (hot-wire) allows to produce the films with desirable parameters. Using of X-ray diffraction and photoluminescence methods the correlation between some photoluminescence bands and the sizes of Si nano-crystallites as well as the amorphous phase volume was shown. The nature of light emission is discussed.

AB - This paper presents the results of PL spectrum studies for Si nano-crystallites embedded in amorphous silicon matrix. Investigated layers were deposited by the hot-wire CVD method on glass substrates at the wafer temperature 300°C and different filament temperatures from the range 1650-1950°C. It was shown that variation of temperatures of filament (hot-wire) allows to produce the films with desirable parameters. Using of X-ray diffraction and photoluminescence methods the correlation between some photoluminescence bands and the sizes of Si nano-crystallites as well as the amorphous phase volume was shown. The nature of light emission is discussed.

KW - Amorphous silicon

KW - HW-CVD

KW - Photoluminescence

KW - Silicon nanostructures

KW - Temperature dependence

KW - XRD

UR - http://www.scopus.com/inward/record.url?scp=38549139545&partnerID=8YFLogxK

M3 - Artículo de la conferencia

AN - SCOPUS:38549139545

SN - 1012-0394

VL - 131-133

SP - 71

EP - 76

JO - Solid State Phenomena

JF - Solid State Phenomena

T2 - 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007

Y2 - 14 October 2007 through 19 October 2007

ER -

Size dependent photoluminescence of Si nano-crystals embedded in amorphous silicon

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