Abstract
This paper presents the results of PL spectrum studies for Si nano-crystallites embedded in amorphous silicon matrix. Investigated layers were deposited by the hot-wire CVD method on glass substrates at the wafer temperature 300°C and different filament temperatures from the range 1650-1950°C. It was shown that variation of temperatures of filament (hot-wire) allows to produce the films with desirable parameters. Using of X-ray diffraction and photoluminescence methods the correlation between some photoluminescence bands and the sizes of Si nano-crystallites as well as the amorphous phase volume was shown. The nature of light emission is discussed.
| Translated title of the contribution | Fotoluminiscencia dependiente del tamaño de nanocristales de Si incrustados en silicio amorfo |
|---|---|
| Original language | English |
| Pages (from-to) | 71-76 |
| Number of pages | 6 |
| Journal | Solid State Phenomena |
| Volume | 131-133 |
| State | Published - 2008 |
| Event | 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007 - Erice, Italy Duration: 14 Oct 2007 → 19 Oct 2007 |
Keywords
- Amorphous silicon
- HW-CVD
- Photoluminescence
- Silicon nanostructures
- Temperature dependence
- XRD