Si−doped In0.145Ga0.855As0.123Sb0.877: A novel p−type quaternary alloy with high crystalline quality

G. Villa-Martínez; D. M. Hurtado-Castañeda; Y. L. Casallas-Moreno; M. Ramírez-López; M. A. González-Morales; M. L. Gómez-Herrera; J. S. Arias-Cerón; V. M. Sánchez Reséndiz; P. Rodríguez-Fragoso; J. L. Herrera-Pérez; J. G. Mendoza-Álvarez

doi:10.1016/j.solidstatesciences.2021.106797

Si−doped In_0.145Ga_0.855As_0.123Sb_0.877: A novel p−type quaternary alloy with high crystalline quality

G. Villa-Martínez, D. M. Hurtado-Castañeda, Y. L. Casallas-Moreno, M. Ramírez-López, M. A. González-Morales, M. L. Gómez-Herrera, J. S. Arias-Cerón, V. M. Sánchez Reséndiz, P. Rodríguez-Fragoso, J. L. Herrera-Pérez, J. G. Mendoza-Álvarez

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Resumen

Antimonide−based p−n junctions are particularly attractive for a wide variety of optoelectronic applications in the near and mid-infrared wavelength range. In this work, novel p−type Si−doped In_0.145Ga_0.855As_0.123Sb_0.877 epitaxial layers were grown on GaSb(100) substrates by Liquid Phase Epitaxy (LPE) technique. The XPS spectra measured on Si−doped In_0.145Ga_0.855As_0.123Sb_0.877 layers indicate that Si atoms behave as acceptors. The analysis of the surface depletion region and its relationship with phonon−plasmon L_ coupling were investigated using Raman spectroscopy, giving an acceptor concentration of N_A ∼ 5.8 × 10¹⁷ cm⁻³ for a depletion region thickness of d ∼ 9.4 nm. Low temperature photoluminiscence (PL) spectrum for the Si−doped In_0.145Ga_0.855As_0.123Sb_0.877 layers showed a bound excitonic emission peak associated to neutral Sb acceptors, with an activation energy of ∼10meV and a donor−acceptor transition. It was observed that the Si doping reduces the excitonic emission intensity and increases the donor−acceptor pair recombination intensity.

Idioma original	Inglés
Número de artículo	106797
Publicación	Solid State Sciences
Volumen	123
DOI	https://doi.org/10.1016/j.solidstatesciences.2021.106797
Estado	Publicada - ene. 2022

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Villa-Martínez, G., Hurtado-Castañeda, D. M., Casallas-Moreno, Y. L., Ramírez-López, M., González-Morales, M. A., Gómez-Herrera, M. L., Arias-Cerón, J. S., Sánchez Reséndiz, V. M., Rodríguez-Fragoso, P., Herrera-Pérez, J. L., & Mendoza-Álvarez, J. G. (2022). Si−doped In_0.145Ga_0.855As_0.123Sb_0.877: A novel p−type quaternary alloy with high crystalline quality. Solid State Sciences, 123, Artículo 106797. https://doi.org/10.1016/j.solidstatesciences.2021.106797

@article{40aec7b902cf4328b0306bf9110c132d,

title = "Si−doped In0.145Ga0.855As0.123Sb0.877: A novel p−type quaternary alloy with high crystalline quality",

abstract = "Antimonide−based p−n junctions are particularly attractive for a wide variety of optoelectronic applications in the near and mid-infrared wavelength range. In this work, novel p−type Si−doped In0.145Ga0.855As0.123Sb0.877 epitaxial layers were grown on GaSb(100) substrates by Liquid Phase Epitaxy (LPE) technique. The XPS spectra measured on Si−doped In0.145Ga0.855As0.123Sb0.877 layers indicate that Si atoms behave as acceptors. The analysis of the surface depletion region and its relationship with phonon−plasmon L_ coupling were investigated using Raman spectroscopy, giving an acceptor concentration of NA ∼ 5.8 × 1017 cm−3 for a depletion region thickness of d ∼ 9.4 nm. Low temperature photoluminiscence (PL) spectrum for the Si−doped In0.145Ga0.855As0.123Sb0.877 layers showed a bound excitonic emission peak associated to neutral Sb acceptors, with an activation energy of ∼10meV and a donor−acceptor transition. It was observed that the Si doping reduces the excitonic emission intensity and increases the donor−acceptor pair recombination intensity.",

keywords = "Liquid phase epitaxy, Optical properties, Phonon-plasmon coupled mode (L_), Si − doped InGaAsSb alloys, Surface depletion layer",

author = "G. Villa-Mart{\'i}nez and Hurtado-Casta{\~n}eda, {D. M.} and Casallas-Moreno, {Y. L.} and M. Ram{\'i}rez-L{\'o}pez and Gonz{\'a}lez-Morales, {M. A.} and G{\'o}mez-Herrera, {M. L.} and Arias-Cer{\'o}n, {J. S.} and {S{\'a}nchez Res{\'e}ndiz}, {V. M.} and P. Rodr{\'i}guez-Fragoso and Herrera-P{\'e}rez, {J. L.} and Mendoza-{\'A}lvarez, {J. G.}",

note = "Publisher Copyright: {\textcopyright} 2021 Elsevier Masson SAS",

year = "2022",

month = jan,

doi = "10.1016/j.solidstatesciences.2021.106797",

language = "Ingl{\'e}s",

volume = "123",

journal = "Solid State Sciences",

issn = "1293-2558",

}

Villa-Martínez, G, Hurtado-Castañeda, DM, Casallas-Moreno, YL , Ramírez-López, M, González-Morales, MA, Gómez-Herrera, ML, Arias-Cerón, JS, Sánchez Reséndiz, VM, Rodríguez-Fragoso, P, Herrera-Pérez, JL & Mendoza-Álvarez, JG 2022, 'Si−doped In_0.145Ga_0.855As_0.123Sb_0.877: A novel p−type quaternary alloy with high crystalline quality', Solid State Sciences, vol. 123, 106797. https://doi.org/10.1016/j.solidstatesciences.2021.106797

TY - JOUR

T1 - Si−doped In0.145Ga0.855As0.123Sb0.877

T2 - A novel p−type quaternary alloy with high crystalline quality

AU - Villa-Martínez, G.

AU - Hurtado-Castañeda, D. M.

AU - Casallas-Moreno, Y. L.

AU - Ramírez-López, M.

AU - González-Morales, M. A.

AU - Gómez-Herrera, M. L.

AU - Arias-Cerón, J. S.

AU - Sánchez Reséndiz, V. M.

AU - Rodríguez-Fragoso, P.

AU - Herrera-Pérez, J. L.

AU - Mendoza-Álvarez, J. G.

PY - 2022/1

Y1 - 2022/1

N2 - Antimonide−based p−n junctions are particularly attractive for a wide variety of optoelectronic applications in the near and mid-infrared wavelength range. In this work, novel p−type Si−doped In0.145Ga0.855As0.123Sb0.877 epitaxial layers were grown on GaSb(100) substrates by Liquid Phase Epitaxy (LPE) technique. The XPS spectra measured on Si−doped In0.145Ga0.855As0.123Sb0.877 layers indicate that Si atoms behave as acceptors. The analysis of the surface depletion region and its relationship with phonon−plasmon L_ coupling were investigated using Raman spectroscopy, giving an acceptor concentration of NA ∼ 5.8 × 1017 cm−3 for a depletion region thickness of d ∼ 9.4 nm. Low temperature photoluminiscence (PL) spectrum for the Si−doped In0.145Ga0.855As0.123Sb0.877 layers showed a bound excitonic emission peak associated to neutral Sb acceptors, with an activation energy of ∼10meV and a donor−acceptor transition. It was observed that the Si doping reduces the excitonic emission intensity and increases the donor−acceptor pair recombination intensity.

AB - Antimonide−based p−n junctions are particularly attractive for a wide variety of optoelectronic applications in the near and mid-infrared wavelength range. In this work, novel p−type Si−doped In0.145Ga0.855As0.123Sb0.877 epitaxial layers were grown on GaSb(100) substrates by Liquid Phase Epitaxy (LPE) technique. The XPS spectra measured on Si−doped In0.145Ga0.855As0.123Sb0.877 layers indicate that Si atoms behave as acceptors. The analysis of the surface depletion region and its relationship with phonon−plasmon L_ coupling were investigated using Raman spectroscopy, giving an acceptor concentration of NA ∼ 5.8 × 1017 cm−3 for a depletion region thickness of d ∼ 9.4 nm. Low temperature photoluminiscence (PL) spectrum for the Si−doped In0.145Ga0.855As0.123Sb0.877 layers showed a bound excitonic emission peak associated to neutral Sb acceptors, with an activation energy of ∼10meV and a donor−acceptor transition. It was observed that the Si doping reduces the excitonic emission intensity and increases the donor−acceptor pair recombination intensity.

KW - Liquid phase epitaxy

KW - Optical properties

KW - Phonon-plasmon coupled mode (L_)

KW - Si − doped InGaAsSb alloys

KW - Surface depletion layer

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U2 - 10.1016/j.solidstatesciences.2021.106797

DO - 10.1016/j.solidstatesciences.2021.106797

M3 - Artículo

AN - SCOPUS:85121385462

SN - 1293-2558

VL - 123

JO - Solid State Sciences

JF - Solid State Sciences

M1 - 106797

ER -