TY - JOUR
T1 - Si−doped In0.145Ga0.855As0.123Sb0.877
T2 - A novel p−type quaternary alloy with high crystalline quality
AU - Villa-Martínez, G.
AU - Hurtado-Castañeda, D. M.
AU - Casallas-Moreno, Y. L.
AU - Ramírez-López, M.
AU - González-Morales, M. A.
AU - Gómez-Herrera, M. L.
AU - Arias-Cerón, J. S.
AU - Sánchez Reséndiz, V. M.
AU - Rodríguez-Fragoso, P.
AU - Herrera-Pérez, J. L.
AU - Mendoza-Álvarez, J. G.
N1 - Publisher Copyright:
© 2021 Elsevier Masson SAS
PY - 2022/1
Y1 - 2022/1
N2 - Antimonide−based p−n junctions are particularly attractive for a wide variety of optoelectronic applications in the near and mid-infrared wavelength range. In this work, novel p−type Si−doped In0.145Ga0.855As0.123Sb0.877 epitaxial layers were grown on GaSb(100) substrates by Liquid Phase Epitaxy (LPE) technique. The XPS spectra measured on Si−doped In0.145Ga0.855As0.123Sb0.877 layers indicate that Si atoms behave as acceptors. The analysis of the surface depletion region and its relationship with phonon−plasmon L_ coupling were investigated using Raman spectroscopy, giving an acceptor concentration of NA ∼ 5.8 × 1017 cm−3 for a depletion region thickness of d ∼ 9.4 nm. Low temperature photoluminiscence (PL) spectrum for the Si−doped In0.145Ga0.855As0.123Sb0.877 layers showed a bound excitonic emission peak associated to neutral Sb acceptors, with an activation energy of ∼10meV and a donor−acceptor transition. It was observed that the Si doping reduces the excitonic emission intensity and increases the donor−acceptor pair recombination intensity.
AB - Antimonide−based p−n junctions are particularly attractive for a wide variety of optoelectronic applications in the near and mid-infrared wavelength range. In this work, novel p−type Si−doped In0.145Ga0.855As0.123Sb0.877 epitaxial layers were grown on GaSb(100) substrates by Liquid Phase Epitaxy (LPE) technique. The XPS spectra measured on Si−doped In0.145Ga0.855As0.123Sb0.877 layers indicate that Si atoms behave as acceptors. The analysis of the surface depletion region and its relationship with phonon−plasmon L_ coupling were investigated using Raman spectroscopy, giving an acceptor concentration of NA ∼ 5.8 × 1017 cm−3 for a depletion region thickness of d ∼ 9.4 nm. Low temperature photoluminiscence (PL) spectrum for the Si−doped In0.145Ga0.855As0.123Sb0.877 layers showed a bound excitonic emission peak associated to neutral Sb acceptors, with an activation energy of ∼10meV and a donor−acceptor transition. It was observed that the Si doping reduces the excitonic emission intensity and increases the donor−acceptor pair recombination intensity.
KW - Liquid phase epitaxy
KW - Optical properties
KW - Phonon-plasmon coupled mode (L_)
KW - Si − doped InGaAsSb alloys
KW - Surface depletion layer
UR - http://www.scopus.com/inward/record.url?scp=85121385462&partnerID=8YFLogxK
U2 - 10.1016/j.solidstatesciences.2021.106797
DO - 10.1016/j.solidstatesciences.2021.106797
M3 - Artículo
AN - SCOPUS:85121385462
SN - 1293-2558
VL - 123
JO - Solid State Sciences
JF - Solid State Sciences
M1 - 106797
ER -