Self-assembly of nanostructures on (631)-oriented GaAs substrates

M. López-López, E. Cruz-Hernández, I. Martínez-Velis, J. Rojas-Ramírez, M. Ramírez-López, A. Pulzara-Mora, J. Hernández-Rosas

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1 Cita (Scopus)

Resumen

In this work we present the growth and characterization of GaAs self-assembled quantum wires (SAQWRs), and InAs self-assembled quantum dots (SAQDs) by molecular beam epitaxy on (631)-oriented GaAs substrates. Adatoms on the (631) crystal plane present a strong surface diffusion anisotropy which we use to induce preferential growth along one direction to produce SAQWRs. On the other hand, InAs SAQDs were obtained on GaAs(631) substrates by the Stransky-Krastanov (S-K) growth method. SAQDs grown directly on (631) substrates presented considerable fluctuations in size. We study the effects of growing a stressor layer before the SAQDs formation to reduce these fluctuations.

Idioma originalInglés
Título de la publicación alojadaAdvanced Summer School in Physics 2007 - Frontiers in Contemporary Physics, EAV07
Páginas210-215
Número de páginas6
DOI
EstadoPublicada - 2007
Publicado de forma externa
Evento3rd Advanced Summer School in Physics: Frontiers in Contemporary Physics, EAV07 - Mexico City, México
Duración: 9 jul. 200713 jul. 2007

Serie de la publicación

NombreAIP Conference Proceedings
Volumen960
ISSN (versión impresa)0094-243X
ISSN (versión digital)1551-7616

Conferencia

Conferencia3rd Advanced Summer School in Physics: Frontiers in Contemporary Physics, EAV07
País/TerritorioMéxico
CiudadMexico City
Período9/07/0713/07/07

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