Self-assembly of nanostructures on (631)-oriented GaAs substrates

M. López-López, E. Cruz-Hernández, I. Martínez-Velis, J. Rojas-Ramírez, M. Ramírez-López, A. Pulzara-Mora, J. Hernández-Rosas

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this work we present the growth and characterization of GaAs self-assembled quantum wires (SAQWRs), and InAs self-assembled quantum dots (SAQDs) by molecular beam epitaxy on (631)-oriented GaAs substrates. Adatoms on the (631) crystal plane present a strong surface diffusion anisotropy which we use to induce preferential growth along one direction to produce SAQWRs. On the other hand, InAs SAQDs were obtained on GaAs(631) substrates by the Stransky-Krastanov (S-K) growth method. SAQDs grown directly on (631) substrates presented considerable fluctuations in size. We study the effects of growing a stressor layer before the SAQDs formation to reduce these fluctuations.

Original languageEnglish
Title of host publicationAdvanced Summer School in Physics 2007 - Frontiers in Contemporary Physics, EAV07
Pages210-215
Number of pages6
DOIs
StatePublished - 2007
Externally publishedYes
Event3rd Advanced Summer School in Physics: Frontiers in Contemporary Physics, EAV07 - Mexico City, Mexico
Duration: 9 Jul 200713 Jul 2007

Publication series

NameAIP Conference Proceedings
Volume960
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference3rd Advanced Summer School in Physics: Frontiers in Contemporary Physics, EAV07
Country/TerritoryMexico
CityMexico City
Period9/07/0713/07/07

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