Raman study of luminescent spark processed porous GaAs

M. Rojas-López, J. M. Gracia-Jiménez, M. A. Vidal, H. Navarro-Contreras, R. Silva-González, E. Gómez

Producción científica: Contribución a una conferenciaArtículo

9 Citas (Scopus)

Resumen

A microRaman probe and a scanning electron microscope with energy dispersive spectroscopy system were used to analyze spark-processed porous GaAs samples prepared by high voltage discharges at low repetition rates in different ambients. The resulting material was found to be amorphous material, with amorphous-GaAs, for samples prepared in pure nitrogen. The cubic phases of As2O3 were substituted by the monoclinic phase of As2O3 'claudetite' for samples prepared under a low concentration of oxygen.
Idioma originalInglés estadounidense
Páginas622-627
Número de páginas6
DOI
EstadoPublicada - 1 may. 2001
Publicado de forma externa
EventoJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures -
Duración: 1 may. 2001 → …

Conferencia

ConferenciaJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Período1/05/01 → …

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